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S29GL032A Datasheet(PDF) 87 Page - SPANSION |
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S29GL032A Datasheet(HTML) 87 Page - SPANSION |
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87 / 95 page ![]() September 10, 2007 S29GL-A_00_A11 S29GL-A 87 Data She e t 17. Erase And Programming Performance Notes 1. Typical program and erase times assume the following conditions: 25 °C, VCC = 3.0V, 10,000 cycles; checkerboard data pattern. 2. Under worst case conditions of 90 °C; Worst case V CC, 100,000 cycles. 3. Effective programming time (typ) is 15 μs (per word), 7.5 μs (per byte). 4. Effective accelerated programming time (typ) is 12.5 μs (per word), 6.3 μs (per byte). 5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation. 6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure. 7. System-level overhead is the time required to execute the command sequence(s) for the program command. See Table 10.2 on page 61 and Table 10.1 on page 62 for further information on command definitions. Notes 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.5 3.5 sec Excludes 00h programming prior to erasure (Note 6) Chip Erase Time S29GL016A 17.5 35 S29GL032A 32 64 S29GL064A 64 128 Total Write Buffer Program Time (Notes 3, 5) 240 µs Excludes system level overhead (Note 7) Total Accelerated Effective Write Buffer Program Time (Notes 4, 5) 200 Chip Program Time S29GL016A 16 sec S29GL032A 31.5 S29GL064A 63 Table 17.1 TSOP Pin and BGA Package Capacitance Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 TSOP 6 7.5 pF BGA 4.2 5.0 pF COUT Output Capacitance VOUT = 0 TSOP 8.5 12 pF BGA 5.4 6.5 pF CIN2 Control Pin Capacitance VIN = 0 TSOP 7.5 9 pF BGA 3.9 4.7 pF |
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