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DAC53608 Datasheet(PDF) 4 Page - Texas Instruments

Part # DAC53608
Description  DACx3608 Octal, 10-Bit or 8-Bit, I2CTM Interface, Buffered Voltage Output DACs in Tiny 3 × 3 WQFN Package
PDF  46 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

DAC53608 Datasheet(HTML) 4 Page - Texas Instruments

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DAC53608, DAC43608
SLASEQ4A – OCTOBER 2018 – REVISED DECEMBER 2018
www.ti.com
Product Folder Links: DAC53608 DAC43608
Submit Documentation Feedback
Copyright © 2018, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Input voltage
VDD to AGND
–0.3
6
V
VREFIN to AGND
–0.3
VDD + 0.3
Digital input(s) to AGND
–0.3
VDD + 0.3
Output voltage
VOUT to AGND
–0.3
VDD + 0.3
V
Input Current
Current into any pin
–10
10
mA
Temperature
Junction temperature,TJ
–40
150
°C
Storage temperature, Tstg
–65
150
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. [Following sentence
optional; see the wiki.] Manufacturing with less than 500-V HBM is possible with the necessary precautions. [Following sentence
optional; see the wiki.] Pins listed as ±WWW V and/or ±XXX V may actually have higher performance.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. [Following sentence
optional; see the wiki.] Manufacturing with less than 250-V CDM is possible with the necessary precautions. [Following sentence
optional; see the wiki.] Pins listed as ±YYY V and/or ±ZZZ V may actually have higher performance.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human body model (HBM), per
ANSI/ESDA/JEDEC JS-001, allpins(1)
±1000
V
Charged device model (CDM), per JEDEC
specificationJESD22-C101, all pins(2)
±500
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VDD to AGND
Positive supply voltage to ground
1.8
5.5
V
VREFIN to AGND
Reference input supply voltage to ground
1.8
VDD
V
VIH
Digital input high voltage, 1.8
≤ VDD ≤ 2.7
VDD – 0.3
V
VIH
Digital input high voltage, 2.7 < VDD ≤ 5.5
2.4
V
VIL
Digital input low voltage
0.5
V
TA
Ambient temperature
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.4 Thermal Information
THERMAL METRIC(1)
DACx3608
UNIT
RTE (WQFN)
16 PIN
RθJA
Junction-to-ambient thermal resistance
49
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
50
°C/W
RθJB
Junction-to-board thermal resistance
24.1
°C/W
ΨJT
Junction-to-top characterization parameter
1.1
°C/W
YJB
Junction-to-board characterization parameter
24.1
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
8.7
°C/W



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