MP5611

– 2.9V TO 5.2V INPUT, TRIPLE-OUTPUT, AMOLED POWER SUPPLY

MP5611 Rev. 1.0

MonolithicPower.com

3

12/16/2021

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PIN FUNCTIONS

Pin #

Name

Description

1

SW1

Switching node of the ELVDD boost converter.

2

PGND1

Power ground of the ELVDD boost converter.

3

ELVDD

Output of the ELVDD boost converter.

4

FB

Feedback. ELVDD output voltage (VOUT) sense pin.

5

FD

Fast discharge enable and disable during shutdown. Pull this pin high to enable fast

discharge.

6

CT

ELVSS transition time configured pin.

7

AGND

Analog ground.

8

EN_AVDD AVDD boost converter enable pin. Pull this pin high to enable the AVDD converter.

9

CTRL

Digital control. This pin also enables the ELVDD and ELVSS converter.

10

ELVSS

Output of the ELVSS inverting buck-boost (IBB) converter.

11

SW2

Switching node of the ELVSS IBB converter.

12

PVIN

Power supply of the ELVSS IBB converter.

13

AVDD

Output of the AVDD boost converter.

14

PGND2

Power ground of the AVDD boost converter.

15

SW3

Switching node of the AVDD boost converter.

16

AVIN

Power supply for internal circuit.

Exposed pad

Exposed pad. Connect this pin to AGND.

ABSOLUTE MAXIMUM RATINGS (1)

VIN, SW1 ..................................... -0.3V to +5.3V

SW3, AVDD ................................. -0.3V to +10V

ELVSS ........................................ -7.5V to +0.3V

SW2............................................ -7.5V to +5.3V

All other pins............................... -0.3V to +5.3V

Junction temperature ............................... 150°C

Lead temperature .................................... 260°C

Storage temperature................ -65°C to +150°C

Continuous power dissipation (TA = 25°C) (2)

TQFN-16 (3mmx3mm)...............................2.1W

ESD Ratings

Human body model (HBM) ..................... ±1.5kV

Charged device model (CDM)....................±2kV

Recommended Operating Conditions (3)

Supply voltage (VIN) ....................... 2.9V to 5.2V

Operating junction temp (TJ) .... -40°C to +125°C

Thermal Resistance (4)

θJA

θJC

TQFN-16 (3mmx3

mm)……..….60…...12...°C/W

Notes:

1) Exceeding these ratings may damage the device.

2) The maximum allowable power dissipation is a function of the

maximum junction temperature TJ (MAX), the junction-to-

ambient thermal resistance θ

JA, and the ambient temperature

TA. The maximum allowable continuous power dissipation at

any ambient temperature is calculated by PD (MAX) = (TJ

(MAX)

– T

A) / θJA. Exceeding the maximum allowable power

dissipation can generate an excessive die temperature, which

may cause the regulator to go into thermal shutdown. Internal

thermal shutdown circuitry protects the device from permanent

damage.

3) The device is not guaranteed to function outside of its operating

conditions.

4) Measured on JESD51-7, 4-layer PCB.