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LTC3412 Datasheet(PDF) 3 Page - Analog Devices |
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LTC3412 Datasheet(HTML) 3 Page - Analog Devices |
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3 / 22 page ![]() LTC3412 3 3412fc For more information www.linear.com/LTC3412 ELECTRICAL CHARACTERISTICS Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC3412E is guaranteed to meet performance specifications from 0°C to 85°C. Specifications over the –40°C to 85°C operating temperature range are assured by design, characterization and correlation with statistical process controls. The LTC3412I is guaranteed to meet specified performance over the –40°C to 85°C temperature range. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS SVIN Signal Input Voltage Range 2.625 5.5 V VFB Regulated Feedback Voltage (Note 3) l 0.784 0.800 0.816 V IFB Voltage Feedback Leakage Current 0.1 0.4 µA ∆VFB Reference Voltage Line Regulation VIN = 2.7V to 5.5V (Note 3) l 0.04 0.2 %V VLOADREG Output Voltage Load Regulation Measured in Servo Loop, VITH = 0.36V Measured in Servo Loop, VITH = 0.84V l l 0.02 –0.02 0.2 –0.2 % % ∆VPGOOD Power Good Range ±7.5 ±9 % RPGOOD Power Good Pull-Down Resistance 120 200 Ω IQ Input DC Bias Current Active Current Sleep Shutdown (Note 4) VFB = 0.78V, VITH = 1V VFB = 1V, VITH = 0V VRUN = 0V, VMODE = 0V 250 62 0.02 330 80 1 µA µA µA fOSC Switching Frequency Switching Frequency Range ROSC = 309kΩ (Note 6) 0.88 0.3 0.95 1.1 4 MHz MHz fSYNC SYNC Capture Range (Note 6) 0.3 4 MHz RPFET RDS(ON) of P-Channel FET ISW = 1A (Note 7) 85 110 mΩ RNFET RDS(ON) of N-Channel FET ISW = –1A (Note 7) 65 90 mΩ ILIMIT Peak Current Limit 4 5.4 A VUVLO Undervoltage Lockout Threshold 2.375 2.500 2.625 V ILSW SW Leakage Current VRUN = 0V, VIN = 5.5V 0.1 1 µA VRUN RUN Threshold 0.5 0.65 0.8 V IRUN RUN/SS Leakage Current 1 µA The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VIN = 3.3V unless otherwise specified. Note 3: The LTC3412 is tested in a feedback loop that adjusts VFB to achieve a specified error amplifier output voltage (ITH). Note 4: Dynamic supply current is higher due to the internal gate charge being delivered at the switching frequency. Note 5: TJ is calculated from the ambient temperature TA and power dissipation as follows: LTC3412: TJ = TA + PD (37.6°C/W). Note 6: 4MHz operation is guaranteed by design and not production tested. Note 7: Switch on resistance is guaranteed by design and test correlation in the UF package and by production test in the FE package. |
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