MAX11008 datasheet(1/67 Pages) MAXIM

Part #	MAX11008

Description	Dual RF LDMOS Bias Controller with Nonvolatile Memory

PDF	67 Pages

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Manufacturer	MAXIM [Maxim Integrated Products]

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General Description

The MAX11008 controller biases RF LDMOS power

devices found in cellular base stations and other wire-

less infrastructure equipment. Each controller includes

a high-side current-sense amplifier with programmable

gains of 2, 10, and 25 to monitor the LDMOS drain cur-

rent over a range of 20mA to 5A. The MAX11008 sup-

ports up to two external diode-connected transistors to

monitor the LDMOS temperatures while an internal tem-

perature sensor measures the local die temperature. A

12-bit successive-approximation register (SAR) analog-

to-digital converter (ADC) converts the analog signals

from the programmable-gain amplifiers (PGAs), exter-

nal temperature sensors, internal temperature measure-

ment, and two additional auxiliary inputs. The

MAX11008 automatically adjusts the LDMOS bias volt-

ages by applying temperature, AIN, and/or drain cur-

rent samples to data stored in lookup tables (LUTs).

The MAX11008 includes two gate-drive channels, each

consisting of a 12-bit DAC to generate the positive gate

voltage for biasing the LDMOS devices. Each gate-

drive output supplies up to ±2mA of gate current. The

gate-drive amplifier is current-limited to ±25mA and

features a fast clamp to AGND.

The MAX11008 contains 4Kb of on-chip, nonvolatile

EEPROM organized as 256 bits x 16 bits to store LUTs

and register information. The device operates from

either a 4-wire 16MHz SPI™-/MICROWIRE™-compati-

ble or an I2C-compatible serial interface.

The MAX11008 operates from a +4.75V to +5.25V ana-

log supply with a typical supply current of 2mA, and a

+2.7V to +5.25V digital supply with a typical supply of

3mA. The device is packaged in a 48-pin, 7mm x 7mm,

thin QFN package and operates over the extended

(-40°C to +85°C) temperature range.

Applications

Cellular Base Stations

Microwave Radio Links

Feed-Forward Power Amps

Transmitters

Industrial Process Control

Features

♦ On-Chip 4Kb EEPROM for Storing LDMOS Bias

Characteristics

♦ Integrated High-Side Current-Sense PGA with

Gain of 2, 10, or 25

♦ ±0.75% Accuracy for Sense Voltage Between

+75mV and +1250mV

♦ Full-Scale Sense Voltage

+100mV with a Gain of 25

+250mV with a Gain of 10

+1250mV with a Gain of 2

♦ Common-Mode Range, LDMOS Drain Voltage:

+5V to +32V

♦ Adjustable Low-Noise 0 to AVDD Output Gate

Bias Voltage Range

♦ Fast Clamp to AGND for LDMOS Protection

♦ 12-Bit DAC Control of Gate with Temperature

♦ Internal Die Temperature Measurement

♦ 2-Channel External Temperature Measurement

through Remote Diodes

♦ Internal 12-Bit ADC Measurement for

Temperature, Current, and Voltage Monitoring

♦ User-Selectable Serial Interface

400kHz/1.7MHz/3.4MHz I2C-Compatible Interface

16MHz SPI-/MICROWIRE-Compatible Interface

Dual RF LDMOS Bias Controller with

Nonvolatile Memory

________________________________________________________________

Maxim Integrated Products

1

19-4371; Rev 0; 11/08

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,

or visit Maxim’s website at www.maxim-ic.com.

SPI is a trademark of Motorola, Inc.

MICROWIRE is a trademark of National Semiconductor Corp.

Ordering Information

PART

PIN-PACKAGE

TEMP

ERROR (°C)

MAX11008BETM+

48 TQFN-EP*

±3

+

Denotes a lead-free/RoHS-compliant package.

*

EP = Exposed pad.

Note: The device is specified over the -40°C to +85°C operating

temperature range.

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