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LT3782AIUFD Datasheet(PDF) 12 Page - Linear Technology |
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LT3782AIUFD Datasheet(HTML) 12 Page - Linear Technology |
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12 / 20 page ![]() LT3782A 12 3782af The gate drive voltage is set by the 10V GBIAS regulator. Consequently, 10V rated MOSFETs are required in most high voltage LT3782A applications. Pay close attention to the BVDSS specifications for the MOSFETs relative to the maximum actual switch voltage in the application. The switch node can ring during the turn-off of the MOSFET due to layout parasitics. Check the switching waveforms of the MOSFET directly across the drain and source terminals using the actual PC board layout (not just on a lab breadboard!) for excessive ringing. Calculating Power MOSFET Switching and Conduction Losses and Junction Temperatures In order to calculate the junction temperature of the power MOSFET, the power dissipated by the device must be known. This power dissipation is a function of the duty cycle, the load current and the junction temperature itself (due to the positive temperature coefficient of its RDS(ON)). As a result, some iterative calculation is normally required to determine a reasonably accurate value. Care should be taken to ensure that the converter is capable of delivering the required load current over all operating conditions (line voltage and temperature), and for the worst-case speci- fications for VSENSE(MAX) and the RDS(ON) of the MOSFET listed in the manufacturer’s data sheet. The power dissipated by the MOSFET in a 2-phase boost converter is: PFET = IO(MAX) 2 1– D ( ) 2 •RDS(ON) •D • T +k• VO 2 • IO(MAX) 2 1– D ( ) •CRSS •f The first term in the equation above represents the I2R losses in the device, and the second term, the switching losses. The constant, k = 1.7, is an empirical factor inversely related to the gate drive current and has the dimension of 1/current. The ρT term accounts for the temperature coefficient of the RDS(ON) of the MOSFET, which is typically 0.4%/°C. Figure 4 illustrates the variation of normalized RDS(ON) over temperature for a typical power MOSFET. JUNCTION TEMPERATURE (°C) –50 1.0 1.5 150 3782A F04 0.5 0 0 50 100 2.0 Figure 4. Normalized RDS(ON) vs Temperature APPLICATIONS INFORMATION |
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