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LT3782AIUFD Datasheet(PDF) 12 Page - Linear Technology

Part # LT3782AIUFD
Description  2-Phase Step-Up DC/DC Controller
PDF  20 Pages
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Manufacturer  LINER [Linear Technology]
Direct Link  http://www.linear.com
Logo LINER - Linear Technology

LT3782AIUFD Datasheet(HTML) 12 Page - Linear Technology

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LT3782A
12
3782af
The gate drive voltage is set by the 10V GBIAS regulator.
Consequently, 10V rated MOSFETs are required in most
high voltage LT3782A applications.
Pay close attention to the BVDSS specifications for the
MOSFETs relative to the maximum actual switch voltage
in the application. The switch node can ring during the
turn-off of the MOSFET due to layout parasitics. Check the
switching waveforms of the MOSFET directly across the
drain and source terminals using the actual PC board layout
(not just on a lab breadboard!) for excessive ringing.
Calculating Power MOSFET Switching and Conduction
Losses and Junction Temperatures
In order to calculate the junction temperature of the power
MOSFET, the power dissipated by the device must be known.
This power dissipation is a function of the duty cycle, the
load current and the junction temperature itself (due to
the positive temperature coefficient of its RDS(ON)). As a
result, some iterative calculation is normally required to
determine a reasonably accurate value. Care should be
taken to ensure that the converter is capable of delivering
the required load current over all operating conditions (line
voltage and temperature), and for the worst-case speci-
fications for VSENSE(MAX) and the RDS(ON) of the MOSFET
listed in the manufacturer’s data sheet.
The power dissipated by the MOSFET in a 2-phase boost
converter is:
PFET =
IO(MAX)
2
1– D
(
)
2
•RDS(ON) •D • T
+k• VO
2 •
IO(MAX)
2
1– D
(
)
•CRSS •f
The first term in the equation above represents the I2R
losses in the device, and the second term, the switching
losses. The constant, k = 1.7, is an empirical factor inversely
related to the gate drive current and has the dimension
of 1/current. The ρT term accounts for the temperature
coefficient of the RDS(ON) of the MOSFET, which is typically
0.4%/°C. Figure 4 illustrates the variation of normalized
RDS(ON) over temperature for a typical power MOSFET.
JUNCTION TEMPERATURE (°C)
–50
1.0
1.5
150
3782A F04
0.5
0
0
50
100
2.0
Figure 4. Normalized RDS(ON) vs Temperature
APPLICATIONS INFORMATION



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