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TPIC44H01DA Datasheet(PDF) 14 Page - Texas Instruments

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Part # TPIC44H01DA
Description  4-CHANNEL SERIAL AND PARALLEL HIGH-SIDE PRE-FET DRIVER
PDF  28 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TPIC44H01DA Datasheet(HTML) 14 Page - Texas Instruments

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TPIC44H01
4-CHANNEL SERIAL AND PARALLEL HIGH-SIDE PRE-FET DRIVER
SLIS088 – SEPTEMBER 1998
14
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
PRINCIPLES OF OPERATION
parallel input data operation
In addition to the serial interface, the TPIC44H01 also provides a parallel interface to control gate drive outputs.
Parallel input is OR’ed with the serial interface control bit. Thus, the parallel inputs provide direct, real-time
control of the output drivers. SCLK and CS are not required to transfer parallel input data to the output buffer.
Fault detection/protection is provided during parallel operation (see
performance under fault conditions
section).
With AR_ENBL pin low, detection of an over-current or short-to-ground fault condition will disabled the gate drive
until the auto-retry timer clears and re-enables the output.
CAUTION:
If a parallel input is cycled low then high during auto-retry time, the timer is reset and the gate drive
re-enable. The device will not prevent the user from switching at a higher duty cycle than the
auto-retry function provides.
Serial fault data can be read over the serial data bus as described in the
serial data operation section. If the FLT
pin is latched low due to a fault detection, it cannot be cleared by cycling the parallel input. It can only be cleared
by a low level on CS.
In applications where the serial interface and FLT interrupt are unused, CS should be tied high to disable the
serial interface.
In applications where the serial interface or FLT interrupt are used only to retrieve fault data, care should be
taken to program the SDI input low to prevent accidental activation of a gate drive output using a serial input
control bit.
charge pump operation
The TPIC44H01 provides a charge pump circuit to generate the high-side gate drive voltage. It is a doubler using
external pump and storage capacitors, CP and CS respectively (refer to the schematic/block diagram). For
V(PWR) voltage levels above 16 V, the charge pump voltage, V(CP), is internally regulated to approximately
V(PWR) + 15 V. However, when V(PWR) voltage rises to higher than 27 V, V(CP) is limited to approximately 42 V
from ground (see Figure 8).
15 V
42 V
V(CP)
V(PWR)
Time
Voltage
42 V
30 V
14 V
Figure 8. Charge Pump Voltage With Respect to V(PWR)



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