| Electronic Components Datasheet Search |
|
LTC3855 Datasheet(PDF) 21 Page - Linear Technology |
|
|
|||||||||||||||||||||||||||||
LTC3855 Datasheet(HTML) 21 Page - Linear Technology |
|
21 / 44 page ![]() LTC3855 3855f applicaTions inForMaTion A reasonable starting point is to choose a ripple current that is about 40% of IOUT(MAX) for a duty cycle less than 40%. Note that the largest ripple current occurs at the highestinputvoltage.Toguaranteethatripplecurrentdoes not exceed a specified maximum, the inductor should be chosen according to: L ≥ VIN – VOUT fOSC •IRIPPLE • VOUT VIN For duty cycles greater than 40%, the 10mV current sense ripple voltage requirement is relaxed because the slope compensation signal aids the signal-to-noise ratio and because a lower limit is placed on the inductor value to avoid subharmonic oscillations. To ensure stability for duty cycles up to the maximum of 95%, use the following equation to find the minimum inductance. L V f I MIN OUT SW LOAD MAX > • • . ( ) 1 4 where LMIN is in units of µH fSW is in units of MHz Inductor Core Selection Once the inductance value is determined, the type of in- ductor must be selected. Core loss is independent of core size for a fixed inductor value, but it is very dependent on inductance selected. As inductance increases, core losses go down. Unfortunately, increased inductance requires more turns of wire and therefore copper losses will increase. Ferrite designs have very low core loss and are preferred at high switching frequencies, so design goals can con- centrate on copper loss and preventing saturation. Ferrite core material saturates “hard,” which means that induc- tance collapses abruptly when the peak design current is exceeded. This results in an abrupt increase in inductor ripple current and consequent output voltage ripple. Do not allow the core to saturate! Power MOSFET and Schottky Diode (Optional) Selection Two external power MOSFETs must be selected for each controller in the LTC3855: one N-channel MOSFET for the top (main) switch, and one N-channel MOSFET for the bottom (synchronous) switch. The peak-to-peak drive levels are set by the INTVCC voltage. This voltage is typically 5V during start-up (see EXTVCC Pin Connection). Consequently, logic-level threshold MOSFETs must be used in most applications. The only exception is if low input voltage is expected (VIN < 5V); then, sub-logic level threshold MOSFETs (VGS(TH) < 3V) should be used. Pay close attention to the BVDSS specification for the MOSFETs as well; most of the logic level MOSFETs are limited to 30V or less. Selection criteria for the power MOSFETs include the on-resistance RDS(ON), Miller capacitance CMILLER, input voltage and maximum output current. Miller capacitance, CMILLER, can be approximated from the gate charge curve usually provided on the MOSFET manufacturers’ data sheet. CMILLER is equal to the increase in gate charge along the horizontal axis while the curve is approximately flat divided by the specified change in VDS. This result is then multiplied by the ratio of the application applied VDS to the gate charge curve specified VDS. When the IC is operating in continuous mode the duty cycles for the top and bottom MOSFETs are given by: Main Switch Duty Cycle = VOUT VIN Synchronous Switch Duty Cycle = VIN – VOUT VIN |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |