SE97 datasheet(37/55 Pages) NXP

37 / 55 page

SE97_7

Product data sheet

Rev. 07 — 29 January 2010

37 of 55

NXP Semiconductors

SE97

DDR memory module temp sensor with integrated SPD, 3.3 V

VOL(SDA) = LOW-level output voltage on pin SDA

VOL(EVENT) = LOW-level output voltage on pin EVENT

IOL(sink)(SDA) = SDA output current LOW

IOL(sink)EVENT = EVENT output current LOW

Calculation example:

Tamb (typical temperature inside the notebook) = 50 °C

IDD(AV) = 400 μA

VDD = 3.6 V

Maximum VOL(SDA) = 0.4 V

IOL(sink)(SDA) = 1 mA

VOL(EVENT) = 0.4 V

IOL(sink)EVENT = 3 mA

Rth(j-a) of HVSON8 = 56 °C/W

Rth(j-a) of TSSOP8 = 160 °C/W

Self heating due to power dissipation for HVSON8 is:

(2)

Self heating due to power dissipation for TSSOP8 is:

(3)

10. Limiting values

ΔT

3.6

0.4

()

0.4

()

0.4

()

[]

°C W 3.04 mW

0.17

°C

⁄

ΔT

160

3.6

0.4

()

0.4

()

0.4

()

[]

160

°C W 3.04 mV

⁄

0.49

°C

Table 27.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDD

supply voltage

−0.3

+4.2

voltage on any other pin

SDA, SCL, EVENT pins

−0.3

+4.2

VA0

voltage on pin A0

overvoltage input; A0 pin

−0.3

+12.5

Isink

sink current

at SDA, SCL, EVENT pins

−1+50.0

Tj(max)

maximum junction temperature

150

°C

Tstg

storage temperature

−65

+165

°C

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