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LPC2103 Datasheet(PDF) 27 Page - NXP Semiconductors |
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LPC2103 Datasheet(HTML) 27 Page - NXP Semiconductors |
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27 / 37 page ![]() LPC2101_02_03_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 2 June 2009 27 of 37 NXP Semiconductors LPC2101/02/03 Single-chip 16-bit/32-bit microcontrollers 8.1 Power consumption in Deep power-down mode Test conditions: Deep power-down mode entered; RTC off; SRAM off; Vi(VBAT) = VDD(3V3) = VDDA = 3.3 V. Fig 6. Core supply current IDD(CORE) measured at different temperatures and supply voltages Test conditions: Deep power-down mode entered; Vi(BAT) = 3.3 V; VDD(1V8) = 1.8 V; VDD(3V3) =VDDA = 3.3 V. Fig 7. Battery supply current IBAT measured at different temperatures and conditions 002aae680 Temperature ( °C) −40 85 35 10 60 −15 0.75 1.25 1 1.5 IDD(CORE) ( µA) 0.5 1.7 V 1.65 V VDD(1V8) =1.8 V 002aae681 Temperature ( °C) −40 85 35 10 60 −15 7.5 12.5 10 15 IBAT ( µA) 5 RTC off; SRAM on RTC off; SRAM off RTC on; SRAM on RTC on; SRAM off |
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