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CDCE937 Datasheet(PDF) 16 Page - Texas Instruments

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Part # CDCE937
Description  Programmable 3-PLL VCXO Clock Synthesizer With 1.8-V, 2.5-V and 3.3-V LVCMOS Outputs
PDF  30 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

CDCE937 Datasheet(HTML) 16 Page - Texas Instruments

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Xin
Xout
Vctr
VCXO
XO
i.e.
XCSEL =10pF
6pF*
20pF
2pF*
*InputCapacitance
C1
C2
20pF
CDCE937
CDCEL937
SLAS564F – AUGUST 2007 – REVISED MARCH 2010
www.ti.com
Table 9. Generic Configuration Register
Offset
(1)
Bit
(2)
Acronym
Default
(3)
Description
7
E_EL
Xb
Device identification (read-only): 1 is CDCE937 (3.3 V), 0 is CDCEL937 (1.8 V)
00h
6:4
RID
Xb
Revision Identification Number (read only)
3:0
VID
1h
Vendor Identification Number (read only)
7
–
0b
Reserved – always write 0
EEPROM Programming Status:
(4) (read only)
0 – EEPROM programming is completed
6
EEPIP
0b
1 – EEPROM is in programming mode
Permanently Lock EEPROM Data
(5)
0 – EEPROM is not locked
5
EELOCK
0b
1 – EEPROM will be permanently locked
01h
Device Power Down (overwrites S0/S1/S2 setting; configuration register settings are unchanged)
Note: PWDN cannot be set to 1 in the EEPROM.
4
PWDN
0b
0 – device active (PLL1 and all outputs are enabled)
1 – device power down (PLL1 in power down and all outputs in 3-state)
3:2
INCLK
00b
Input clock selection:
00 – Xtal
01 – VCXO
10 – LVCMOS
11 – reserved
1:0
SLAVE_ADR
01b
Programmable Address Bits A0 and A1 of the Slave Receiver Address
7
M1
1b
Clock source selection for output Y1:
0 – input clock
1 – PLL1 clock
Operation mode selection for pin 18/19
(6)
6
SPICON
0b
0 – serial programming interface SDA (pin 19) and SCL (pin 18)
1 – control pins S1 (pin 19) and S2 (pin 18)
02h
5:4
Y1_ST1
11b
Y1-State0/1 Definition
00 – device power down (all PLLs in power down and all outputs in 3-State)
10 – Y1 disabled to low
3:2
Y1_ST0
01b
01 – Y1 disabled to 3-state
11 – Y1 enabled
1:0
Pdiv1 [9:8]
10-Bit Y1-Output-Divider Pdiv1:
0 – divider reset and stand-by
001h
1-to-1023 – divider value
03h
7:0
Pdiv1 [7:0]
7
Y1_7
0b
Y1_ST0/Y1_ST1 State Selection
(7)
6
Y1_6
0b
0 – State0 (predefined by Y1_ST0)
1 – State1 (predefined by Y1_ST1)
5
Y1_5
0b
4
Y1_4
0b
04h
3
Y1_3
0b
2
Y1_2
0b
1
Y1_1
1b
0
Y1_0
0b
Crystal Load Capacitor
00h
→ 0 pF
Selection
(8)
01h
→ 1 pF
02h
→ 2 pF
7:3
XCSEL
0Ah
:
05h
14h-to-1Fh
→ 20 pF
2:0
0b
Reserved – do not write other than 0
7-Bit Byte Count (defines the number of bytes which will be sent from this device at the next Block Read transfer); all bytes have to
7:1
BCOUNT
40h
be read out to correctly finish the read cycle.)
06h
0– no EEPROM write cycle
Initiate EEPROM Write Cycle
(4) (9)
0
EEWRITE
0b
1 – start EEPROM write cycle (internal configuration register is saved to the EEPROM)
(1)
Writing data beyond ‘40h’ may affect device function.
(2)
All data transferred with the MSB first.
(3)
Unless customer-specific setting.
(4)
During EEPROM programming, no data is allowed to be sent to the device via the SDA/SCL bus until the programming sequence is
completed. Data, however, can be read out during the programming sequence (Byte Read or Block Read).
(5)
If this bit is set to high in the EEPROM, the actual data in the EEPROM will be permanently locked. There is no further programming
possible. Data, however can still be written via SDA/SCL bus to the internal register to change device function on the fly. But new data
can no longer be saved to the EEPROM. EELOCK is effective only, if written into the EEPROM!
(6)
Selection of “control pins” is effective only if written into the EEPROM. Once written into the EEPROM, the serial programming pins are
no longer available. However, if VDDOUT is forced to GND, the two control pins, S1 and S2, temporally act as serial programming pins
(SDA/SCL), and the two slave receiver address bits are reset to A0=”0” and A1=“0”.
(7)
These are the bits of the Control Terminal Register. The user can predefine up to eight different control settings. These settings then
can be selected by the external control pins, S0, S1, and S2.
(8)
The internal load capacitor (C1, C2) has to be used to achieve the best clock performance. External capacitors should be used only to
finely adjust CL by a few pF's. The value of CL can be programmed with a resolution of 1 pF for a crystal load range of 0 pF to 20 pF.
For CL > 20 pF, use additional external capacitors. Also, the value of the device input capacitance has to be considered which always
adds 1.5 pF (6 pF//2 pF) to the selected CL. For more information about VCXO configuration and crystal recommendation, see
application report SCAA085.
(9)
Note: The EEPROM WRITE bit must be sent last. This ensures that the content of all internal registers are stored in the EEPROM. The
EEWRITE cycle is initiated with the rising edge of the EEWRITE bit. A static level high does not trigger an EEPROM WRITE cycle. The
EEWRITE bit has to be reset to low after the programming is completed. The programming status can be monitored by reading out
EEPIP. If EELOCK is set to high, no EEPROM programming is possible.
16
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Product Folder Link(s): CDCE937 CDCEL937



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