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CDCE937 Datasheet(PDF) 16 Page - Texas Instruments |
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CDCE937 Datasheet(HTML) 16 Page - Texas Instruments |
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16 / 30 page ![]() Xin Xout Vctr VCXO XO i.e. XCSEL =10pF 6pF* 20pF 2pF* *InputCapacitance C1 C2 20pF CDCE937 CDCEL937 SLAS564F – AUGUST 2007 – REVISED MARCH 2010 www.ti.com Table 9. Generic Configuration Register Offset (1) Bit (2) Acronym Default (3) Description 7 E_EL Xb Device identification (read-only): 1 is CDCE937 (3.3 V), 0 is CDCEL937 (1.8 V) 00h 6:4 RID Xb Revision Identification Number (read only) 3:0 VID 1h Vendor Identification Number (read only) 7 – 0b Reserved – always write 0 EEPROM Programming Status: (4) (read only) 0 – EEPROM programming is completed 6 EEPIP 0b 1 – EEPROM is in programming mode Permanently Lock EEPROM Data (5) 0 – EEPROM is not locked 5 EELOCK 0b 1 – EEPROM will be permanently locked 01h Device Power Down (overwrites S0/S1/S2 setting; configuration register settings are unchanged) Note: PWDN cannot be set to 1 in the EEPROM. 4 PWDN 0b 0 – device active (PLL1 and all outputs are enabled) 1 – device power down (PLL1 in power down and all outputs in 3-state) 3:2 INCLK 00b Input clock selection: 00 – Xtal 01 – VCXO 10 – LVCMOS 11 – reserved 1:0 SLAVE_ADR 01b Programmable Address Bits A0 and A1 of the Slave Receiver Address 7 M1 1b Clock source selection for output Y1: 0 – input clock 1 – PLL1 clock Operation mode selection for pin 18/19 (6) 6 SPICON 0b 0 – serial programming interface SDA (pin 19) and SCL (pin 18) 1 – control pins S1 (pin 19) and S2 (pin 18) 02h 5:4 Y1_ST1 11b Y1-State0/1 Definition 00 – device power down (all PLLs in power down and all outputs in 3-State) 10 – Y1 disabled to low 3:2 Y1_ST0 01b 01 – Y1 disabled to 3-state 11 – Y1 enabled 1:0 Pdiv1 [9:8] 10-Bit Y1-Output-Divider Pdiv1: 0 – divider reset and stand-by 001h 1-to-1023 – divider value 03h 7:0 Pdiv1 [7:0] 7 Y1_7 0b Y1_ST0/Y1_ST1 State Selection (7) 6 Y1_6 0b 0 – State0 (predefined by Y1_ST0) 1 – State1 (predefined by Y1_ST1) 5 Y1_5 0b 4 Y1_4 0b 04h 3 Y1_3 0b 2 Y1_2 0b 1 Y1_1 1b 0 Y1_0 0b Crystal Load Capacitor 00h → 0 pF Selection (8) 01h → 1 pF 02h → 2 pF 7:3 XCSEL 0Ah : 05h 14h-to-1Fh → 20 pF 2:0 0b Reserved – do not write other than 0 7-Bit Byte Count (defines the number of bytes which will be sent from this device at the next Block Read transfer); all bytes have to 7:1 BCOUNT 40h be read out to correctly finish the read cycle.) 06h 0– no EEPROM write cycle Initiate EEPROM Write Cycle (4) (9) 0 EEWRITE 0b 1 – start EEPROM write cycle (internal configuration register is saved to the EEPROM) (1) Writing data beyond ‘40h’ may affect device function. (2) All data transferred with the MSB first. (3) Unless customer-specific setting. (4) During EEPROM programming, no data is allowed to be sent to the device via the SDA/SCL bus until the programming sequence is completed. Data, however, can be read out during the programming sequence (Byte Read or Block Read). (5) If this bit is set to high in the EEPROM, the actual data in the EEPROM will be permanently locked. There is no further programming possible. Data, however can still be written via SDA/SCL bus to the internal register to change device function on the fly. But new data can no longer be saved to the EEPROM. EELOCK is effective only, if written into the EEPROM! (6) Selection of “control pins” is effective only if written into the EEPROM. Once written into the EEPROM, the serial programming pins are no longer available. However, if VDDOUT is forced to GND, the two control pins, S1 and S2, temporally act as serial programming pins (SDA/SCL), and the two slave receiver address bits are reset to A0=”0” and A1=“0”. (7) These are the bits of the Control Terminal Register. The user can predefine up to eight different control settings. These settings then can be selected by the external control pins, S0, S1, and S2. (8) The internal load capacitor (C1, C2) has to be used to achieve the best clock performance. External capacitors should be used only to finely adjust CL by a few pF's. The value of CL can be programmed with a resolution of 1 pF for a crystal load range of 0 pF to 20 pF. For CL > 20 pF, use additional external capacitors. Also, the value of the device input capacitance has to be considered which always adds 1.5 pF (6 pF//2 pF) to the selected CL. For more information about VCXO configuration and crystal recommendation, see application report SCAA085. (9) Note: The EEPROM WRITE bit must be sent last. This ensures that the content of all internal registers are stored in the EEPROM. The EEWRITE cycle is initiated with the rising edge of the EEWRITE bit. A static level high does not trigger an EEPROM WRITE cycle. The EEWRITE bit has to be reset to low after the programming is completed. The programming status can be monitored by reading out EEPIP. If EELOCK is set to high, no EEPROM programming is possible. 16 Submit Documentation Feedback Copyright © 2007–2010, Texas Instruments Incorporated Product Folder Link(s): CDCE937 CDCEL937 |
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