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TPS23754PWPR Datasheet(PDF) 4 Page - Texas Instruments |
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TPS23754PWPR Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 41 page  TPS23754 TPS23754-1 TPS23756 SLVS885D – OCTOBER 2008 – REVISED DECEMBER 2009 www.ti.com PARAMETER TEST CONDITIONS MIN TYP MAX UNIT FRS CTL = VB, measure GATE Switching frequency kHz RFRS = 68.1 kΩ 227 253 278 DMAX Duty cycle CTL= VB, measure GATE 76 78 80 % VSYNC Synchronization Input threshold 2 2.2 2.4 V CTL VZDC 0% duty cycle threshold VCTL ↓ until GATE stops 1.3 1.5 1.7 V Softstart period Interval from switching start to VCSMAX 1.9 3.9 6.2 ms Input resistance 70 100 145 k Ω BLNK BLNK = RTN 35 55 78 Blanking delay ns (In addition to t1) RBLNK = 49.9 kΩ 38 55 70 DT CTL = VB, CGATE = 1 nF, CGAT2 = 1 nF, measure GATE, GAT2 tDT1 RDT = 24.9 kΩ, GAT2 ↑ to GATE ↑ 40 50 62.5 Dead time ns tDT2 See Figure 2 for tDTx definition RDT = 24.9 kΩ, GATE ↓ to GAT2 ↓ 40 50 62.5 tDT1 RDT = 75 kΩ, GAT2 ↑ to GATE ↑ 120 150 188 tDT2 RDT = 75 kΩ, GATE ↓ to GAT2 ↓ 120 150 188 CS VCSMAX Maximum threshold voltage VCTL = VB, VCS rising until GATE duty cycle drops 0.5 0.55 0.6 V t1 Turnoff delay VCS = 0.65 V 24 40 70 ns Internal slope compensation VSLOPE Peak voltage at maximum duty cycle, referenced to CS 120 155 185 mV voltage Peak slope compensation ISL_EX VCTL = VB, ICS at maximum duty cycle 30 42 54 μA current Bias current (sourcing) DC component of ICS 1 2.5 4.3 μA GATE Source current VCTL = VB, VC = 12 V, GATE high, pulsed measurement 0.37 0.6 0.95 A Sink current VCTL = VB, VC = 12 V, GATE low, pulsed measurement 0.7 1.0 1.4 A GAT2 VCTL = VB, VC = 12 V, GAT2 high, RDT = 24.9 kΩ, pulsed Source current 0.37 0.6 0.95 A measurement VCTL = VB, VC = 12 V, GAT2 low, RDT = 24.9 kΩ, pulsed Sink current 0.7 1.0 1.4 A measurement APD / PPD VAPDEN VAPD rising 1.43 1.5 1.57 APD threshold voltage V VAPDH Hysteresis (2) 0.29 0.31 0.33 VPPDEN VPPD- VVSS rising, UVLO disable 1.45 1.55 1.65 V VPPDH Hysteresis (2) 0.29 0.31 0.33 PPD threshold voltage VPPD2 VPPD- VVSS rising, Class enable 7.4 8.3 9.2 V VPPD2H Hysteresis (2) 0.5 0.6 0.7 APD leakage current VC = 12 V, VAPD = VB 1 μA (source or sink) IPPD PPD sink current VPPD-VSS = 1.5 V 2.5 5 7.5 μA THERMAL SHUTDOWN Turnoff temperature TJ rising 135 145 155 °C Hysteresis(3) 20 °C (2) The hysteresis tolerance tracks the rising threshold for a given device. (3) These parameters are provided for reference only, and do not constitute part of TI's published specifications for purposes of TI's product warranty. 4 Submit Documentation Feedback Copyright © 2008–2009, Texas Instruments Incorporated |
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