BLF871 datasheet(3/18 Pages) NXP

3 / 18 page

BLF871_2

Preliminary data sheet

Rev. 02 — 5 March 2009

3 of 18

NXP Semiconductors

BLF871

UHF power LDMOS transistor

Thermal characteristics

[1]

Rth(j-c) is measured under RF conditions.

Characteristics

[1]

ID is the drain current.

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

Rth(j-c)

thermal resistance from junction to case

Tcase =80 °C;

PL(AV) =50W

[1]

0.95

K/W

Table 6.

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ Max

Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 1.12 mA [1] 89

105.5 V

VGS(th)

gate-source threshold voltage

VDS = 10 V; ID = 112 mA [1] 1.4

2.4

IDSS

drain leakage current

VGS =0V; VDS =40V

1.4

µA

IDSX

drain cut-off current

VGS =VGSth + 3.75 V;

VDS =10V

16.7 20

IGSS

gate leakage current

VGS =10V; VDS = 0 V

140

RDS(on)

drain-source on-state resistance VGS =VGSth + 3.75 V;

ID = 3.7 A

[1]

210 -

Ω

Ciss

input capacitance

VGS = 0 V; VDS =40V;

f=1MHz

-95

Coss

output capacitance

VGS = 0 V; VDS =40V;

f=1MHz

-30

Crss

reverse transfer capacitance

VGS = 0 V; VDS =40V;

f=1MHz

-1

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