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BLF871 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BLF871 Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 18 page ![]() BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 6 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 7.1.3 DVB-T VDS =40V; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit. VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit. (1) Low frequency component (2) High frequency component Fig 5. DVB-T power gain and drain efficiency as functions of average load power; typical values Fig 6. DVB-T third order intermodulation distortion as a function of average load power; typical values PL(AV) (W) 060 40 20 001aaj280 20 22 24 Gp (dB) ηD (%) 18 20 40 60 0 Gp ηD 001aaj281 PL(AV) (W) 060 40 20 −35 −45 −25 −15 IMD3 (dBc) −55 (1) (2) |
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