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BLF871 Datasheet(PDF) 1 Page - NXP Semiconductors |
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BLF871 Datasheet(HTML) 1 Page - NXP Semiconductors |
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1 / 18 page  1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features I 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: N Peak envelope power load power = 100 W N Power gain = 21 dB N Drain efficiency = 47 % N Third order intermodulation distortion = −35 dBc I DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: N Average output power = 24 W N Power gain = 22 dB N Drain efficiency = 33 % N Third order intermodulation distortion = −34 dBc (4.3 MHz from center frequency) BLF871 UHF power LDMOS transistor Rev. 02 — 5 March 2009 Preliminary data sheet Table 1. Typical performance RF performance at VDS = 40 V in a common-source 860 MHz test circuit. Mode of operation f PL PL(PEP) PL(AV) Gp η D IMD3 PAR (MHz) (W) (W) (W) (dB) (%) (dBc) (dB) CW, class AB 860 100 - - 21 60 - - 2-tone, class AB f1 = 860; f2 = 860.1 - 100 - 21 47 −35 - DVB-T (8k OFDM) 858 - - 24 22 33 −34[1] 8.3[2] CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. |
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