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BLF871 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BLF871 Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 18 page ![]() BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 7 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 7.2 Broadband RF figures 7.2.1 2-Tone IDq = 0.5 A; measured in a common source broadband test circuit as described in Section 8. (1) VDS = 40 V; PL(AV) = 45 W (2) VDS = 42 V; PL(AV) = 50 W IDq = 0.5 A; measured in a common source broadband test circuit as described in Section 8. (1) VDS = 40 V; PL(AV) = 45 W (2) VDS = 42 V; PL(AV) = 50 W Fig 7. 2-Tone power gain and drain efficiency as a function of frequency; typical values Fig 8. 2-Tone third order intermodulation distortion as a function of frequency; typical values f (MHz) 400 900 800 600 700 500 001aaj282 18 16 20 22 Gp (dB) ηD (dB) 14 50 40 60 70 30 (2) (1) (2) (1) Gp ηD f (MHz) 400 900 800 600 700 500 001aaj283 −40 −20 0 IMD3 (dBc) −60 (2) (1) |
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