BLF871 datasheet(8/18 Pages) NXP

8 / 18 page

BLF871_2

Preliminary data sheet

Rev. 02 — 5 March 2009

8 of 18

NXP Semiconductors

BLF871

UHF power LDMOS transistor

7.2.2 DVB-T

IDq = 0.5 A; measured in a common source broadband

test circuit as described in Section 8.

(1) VDS = 40 V; PL(AV) = 22 W

(2) VDS = 42 V; PL(AV) = 24 W

IDq = 0.5 A; measured in a common source broadband

test circuit as described in Section 8.

(1) VDS = 40 V; PL(AV) = 22 W

(2) VDS = 42 V; PL(AV) = 24 W

Fig 9.

DVB-T power gain and drain efﬁciency as

functions of frequency; typical values

Fig 10. DVB-T third order intermodulation distortion

as a function of frequency; typical values

IDq = 0.5 A; measured in a common source broadband test circuit as described in Section 8.

PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.

(1) PAR at 0.01 % probability on the CCDF; VDS = 40 V; PL(AV) = 22 W

(2) PAR at 0.01 % probability on the CCDF; VDS = 42 V; PL(AV) = 24 W

(3) PAR at 0.1 % probability on the CCDF; VDS = 40 V; PL(AV) = 22 W

(4) PAR at 0.1 % probability on the CCDF; VDS = 42 V; PL(AV) = 24 W

Fig 11. DVB-T PAR at 0.1 % and at 0.01 % probability on the CCDF as function of frequency; typical values

f (MHz)

400

900

800

600

700

500

001aaj284

(dB)

ηD

(%)

(2)

(1)

(2)

ηD

f (MHz)

400

900

800

600

700

500

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−40

−20

IMD3

(dBc)

−60

(2)

(1)

f (MHz)

400

900

800

600

700

500

001aaj286

PAR

(dB)

(1)

(2)

(3)

(4)

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