BLF871 datasheet(5/18 Pages) NXP

5 / 18 page

BLF871_2

Preliminary data sheet

Rev. 02 — 5 March 2009

5 of 18

NXP Semiconductors

BLF871

UHF power LDMOS transistor

7.1 Narrowband RF ﬁgures

7.1.1 CW

7.1.2 2-Tone

VDS =40V; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit.

Fig 2.

CW power gain and drain efﬁciency as a function of load power; typical values

001aaj277

PL (W)

180

120

(dB)

ηD

(%)

ηD

VDS =40V; IDq = 0.5 A; measured in a common source

narrowband 860 MHz test circuit.

VDS = 40 V; IDq = 0.5 A; measured in a common source

narrowband 860 MHz test circuit.

(1) Low frequency component

(2) High frequency component

Fig 3.

2-Tone power gain and drain efﬁciency as

functions of average load power; typical

values

Fig 4.

2-Tone third order intermodulation distortion

as a function of average load power; typical

values

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PL(AV) (W)

120

(dB)

ηD

(%)

ηD

PL(AV) (W)

120

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−40

−20

IMD3

(dBc)

−60

(1)

(2)

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