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BLF871 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BLF871 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 18 page ![]() BLF871_2 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 02 — 5 March 2009 4 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 7. Application information [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; typical values 001aaj276 VDS (V) 060 40 20 80 40 120 160 Coss (pF) 0 Table 7. RF performance in a common-source narrowband 860 MHz test circuit Th =25 °C unless otherwise specified. Mode of operation f VDS IDq PL(PEP) PL(AV) Gp ηD IMD3 PAR (MHz) (V) (A) (W) (W) (dB) (%) (dBc) (dB) 2-tone, class AB f1 = 860; f2 = 860.1 40 0.5 100 - > 19 > 44 < −30 - DVB-T (8k OFDM) 858 40 0.5 - 24 > 19 > 30 < −31 [1] > 7.8 [2] |
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