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LPC1763 Datasheet(PDF) 53 Page - NXP Semiconductors |
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LPC1763 Datasheet(HTML) 53 Page - NXP Semiconductors |
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53 / 79 page ![]() LPC1769_68_67_66_65_64_63 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 7 — 5 April 2011 53 of 79 NXP Semiconductors LPC1769/68/67/66/65/64/63 32-bit ARM Cortex-M3 microcontroller 11. Dynamic characteristics 11.1 Flash memory [1] Number of program/erase cycles. [2] Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash in blocks of 256 bytes. 11.2 External clock [1] Parameters are valid over operating temperature range unless otherwise specified. [2] Typical ratings are not guaranteed. The values listed are at room temperature (25 °C), nominal supply voltages. Table 9. Flash characteristics Tamb = −40 °C to +85 °C, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Nendu endurance [1] 10000 100000 - cycles tret retention time powered 10 - - years unpowered 20 - - years ter erase time sector or multiple consecutive sectors 95 100 105 ms tprog programming time [2] 0.95 1 1.05 ms Table 10. Dynamic characteristic: external clock Tamb = −40 °C to +85 °C; VDD(3V3) over specified ranges.[1] Symbol Parameter Conditions Min Typ[2] Max Unit fosc oscillator frequency 1 - 25 MHz Tcy(clk) clock cycle time 40 - 1000 ns tCHCX clock HIGH time Tcy(clk) × 0.4 - - ns tCLCX clock LOW time Tcy(clk) × 0.4 - - ns tCLCH clock rise time - - 5 ns tCHCL clock fall time - - 5 ns Fig 15. External clock timing (with an amplitude of at least Vi(RMS) = 200 mV) tCHCL tCLCX tCHCX Tcy(clk) tCLCH 002aaa907 |
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