INA128-HT, INA129-HT

SBOS501D – JANUARY 2010 – REVISED JUNE 2012

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ELECTRICAL CHARACTERISTICS FOR INA129 (continued)

over operating free-air temperature range (unless otherwise noted)

(1)

TEST

PARAMETER

UNIT

CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

GAIN

1 +

1 +

Gain equation

V/V

(49.4 k

(49.4 k

Range of gain

1

10000

1

10000

V/V

G = 1

±0.01

±0.1

±1.1

G = 10

±0.02

±0.5

±2.6

Gain error

%

G = 100

±0.05

±0.7

±13.5

G = 1000

±0.5

±2.5

±65.5

G = 1

±1

±10

±100

ppm/°C

49.4-k

±25

±100

±100

ppm/°C

±0.0001

±0.001

±0.1

G = 1

% of

G = 10

±0.0003

±0.002

±0.2

Nonlinearity

FSR

G = 100

±0.0005

±0.002

±0.7

G = 1000

±0.001

±2.4

OUTPUT

Positive

(V+)

− 1.4

(V+)

− 0.9

(V+)

− 1.4

(V+)

− 0.9

Voltage

V

Negative

(V

−) + 1.4

(V

−) + 0.8

(V

−) + 1.4

(V

−) + 0.8

Load capacitance stability

1000

1000

pF

Short-curcuit current

+6/

−15

+12/

−5

mA

FREQUENCY RESPONSE

G = 1

1300

850

G = 10

700

400

Bandwidth,

−3 dB

kHz

G = 100

200

50

G = 1000

20

7.5

Slew rate

4

4

V/µs

G = 10

G = 1

7

10

G = 10

7

10

Settling time, 0.01%

µs

G = 100

9

30

G = 1000

80

150

Overload recovery

50% overdrive

4

4

µs

POWER SUPPLY

Voltage range

±2.25

±15

±18

±2.25

±15

±18

V

Current, total

±0.7

±1

±2

mA

TEMPERATURE RANGE

Specification

−55

125

210

°C

Operating

−55

125

210

°C

(3)

Specified by wafer test.

(4)

Temperature coefficient of the 49.4-k

Ω term in the gain equation.

(5)

Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%.

8

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