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KMA220 Datasheet(PDF) 13 Page - NXP Semiconductors

Part # KMA220
Description  Dual channel programmable angle sensor
PDF  36 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

KMA220 Datasheet(HTML) 13 Page - NXP Semiconductors

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KMA220
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 24 May 2012
13 of 36
NXP Semiconductors
KMA220
Dual channel programmable angle sensor
[1]
Measured at 1 MHz.
Table 15.
Digital interface
Characteristics are valid for the operating conditions, as specified in Section 9.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIH
HIGH-level input voltage
80
-
-
%VDD
VIL
LOW-level input voltage
-
-
20
%VDD
VOH
HIGH-level output voltage
IO =2mA
80
-
-
%VDD
VOL
LOW-level output voltage
IO =2mA
-
-
20
%VDD
Iod
overdrive current
absolute value for overdriving
the output buffer
--
20
mA
tstart
start time
LOW level before rising edge
5
-
-
s
tstop
stop time
HIGH level before falling edge
5
-
-
s
Tbit
bit period
the load capacitance limits the
minimum period
10
-
100
s
T
bit
bit period deviation
deviation between received
clock and sent clock
0.8Tbit
1Tbit
1.2Tbit
s
tw0
pulse width 0
0.175Tbit
0.25Tbit
0.375Tbit
s
tw1
pulse width 1
0.625Tbit
0.75Tbit
0.825Tbit
s
tto
time-out time
communication reset
guaranteed after maximum tto
--
220
s
ttko(slv)
slave takeover time
duration of LOW level for
slave takeover
1-
5
s
ttko(mas)
master takeover time
duration of LOW level for
master takeover
0Tbit
-0.5Tbit
s
tprog
programming time
for a single memory address
20
-
-
ms
tcp
charge pump time
waiting time after enabling the
non-volatile memory charge
pump clock
1-
-
ms
Table 16.
Internal capacitances
Characteristics are valid for the operating conditions, as specified in Section 9.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Cblock
blocking capacitance
[1] 50
100
150
nF
CL
load capacitance
[1] 1.1
2.2
3.3
nF



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