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KMA220 Datasheet(PDF) 13 Page - NXP Semiconductors |
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KMA220 Datasheet(HTML) 13 Page - NXP Semiconductors |
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13 / 36 page ![]() KMA220 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 24 May 2012 13 of 36 NXP Semiconductors KMA220 Dual channel programmable angle sensor [1] Measured at 1 MHz. Table 15. Digital interface Characteristics are valid for the operating conditions, as specified in Section 9. Symbol Parameter Conditions Min Typ Max Unit VIH HIGH-level input voltage 80 - - %VDD VIL LOW-level input voltage - - 20 %VDD VOH HIGH-level output voltage IO =2mA 80 - - %VDD VOL LOW-level output voltage IO =2mA - - 20 %VDD Iod overdrive current absolute value for overdriving the output buffer -- 20 mA tstart start time LOW level before rising edge 5 - - s tstop stop time HIGH level before falling edge 5 - - s Tbit bit period the load capacitance limits the minimum period 10 - 100 s T bit bit period deviation deviation between received clock and sent clock 0.8Tbit 1Tbit 1.2Tbit s tw0 pulse width 0 0.175Tbit 0.25Tbit 0.375Tbit s tw1 pulse width 1 0.625Tbit 0.75Tbit 0.825Tbit s tto time-out time communication reset guaranteed after maximum tto -- 220 s ttko(slv) slave takeover time duration of LOW level for slave takeover 1- 5 s ttko(mas) master takeover time duration of LOW level for master takeover 0Tbit -0.5Tbit s tprog programming time for a single memory address 20 - - ms tcp charge pump time waiting time after enabling the non-volatile memory charge pump clock 1- - ms Table 16. Internal capacitances Characteristics are valid for the operating conditions, as specified in Section 9. Symbol Parameter Conditions Min Typ Max Unit Cblock blocking capacitance [1] 50 100 150 nF CL load capacitance [1] 1.1 2.2 3.3 nF |
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