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SPC564B74L7 Datasheet(PDF) 71 Page - STMicroelectronics

Part # SPC564B74L7
Description  32-bit MCU family built on the Power Architecture® for automotive body electronics applications
PDF  118 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SPC564B74L7 Datasheet(HTML) 71 Page - STMicroelectronics

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SPC564Bxx - SPC56ECxx
Electrical Characteristics
Doc ID 17478 Rev 4
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4.10.2
Flash memory power supply DC characteristics
Table 30 shows the flash memory power supply DC characteristics on external supply.
Table 29.
Flash memory read access timing
Symbol
C
Parameter
Conditions(1)
Max
Unit
Code flash
memory
Data flash
memory
fREAD
CC
P
Maximum frequency for Flash
reading
5 wait states
13 wait states
120
+ 2%
MHz
C
3 wait state
9 wait state
80
+ 2%
D3 wait states(2)
64
+ 2%
C
7 wait states
1.
VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified.
2.
Wait states are subject to change per device characterization.
Table 30.
Flash memory power supply DC electrical characteristics
Symbol
Parameter
Conditions(1)
Value(2)
Unit
Min
Typ Max
ICFREAD
(3)
CC
Sum of the current consumption
on VDD_HV_A on read access
Flash memory module read
fCPU = 120 MHz + 2%
(4)
Code flash
memory
33
mA
IDFREAD
(3)
Data flash
memory
13
ICFMOD
(3)
CC
Sum of the current consumption
on VDD_HV_A (program/erase)
Program/Erase on-going
while reading flash memory
registers
fCPU = 120 MHz + 2%
(4)
Code flash
memory
52
mA
IDFMOD
(3)
Data flash
memory
13
ICFLPW
(3)
CC
Sum of the current consumption
on VDD_HV_A during flash
memory low power mode
Code flash
memory
1.1
mA
ICFPWD
(3)
CC
Sum of the current consumption
on VDD_HV_A during flash
memory power down mode
Code flash
memory
150
µA
IDFPWD
(3)
Data flash
memory
150
1.
VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = –40 to 125 °C, unless otherwise specified.
2.
All values need to be confirmed during device validation.
3.
Data based on characterization results, not tested in production.
4.
fCPU 120 MHz + 2% can be achieved over full temperature 125 °C ambient, 150 °C junction temperature.



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