Dual/Doubler Interleaved MOSFET Driver

October 27, 2011 | FINAL | V1.09

8

IR3598

ELECTRICAL SPECIFICATIONS

RECOMMENDED OPERATING CONDITIONS FOR RELIABLE OPERATION WITH MARGIN

Recommended Operating Ambient Temperature Range

0°C to 85°C

Maximum Operating Junction Temperature

125°C

VCC Supply Voltage Range

+5V ± 10%

VDRV

4.0V to 13.2V

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, these specifications were tested at +25°C. VCC = VDRV = 5.0V.

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

Supply

Supply Bias Current Shutdown – Dual

Mode

ENABLE LOW

1.8

2.1

2.7

mA

Supply Bias Current Idle – Dual Mode

Tri-stated Gate Driver

2.6

3.3

4.0

mA

Supply Bias Current Idle – Doubler Mode

Tri-stated Gate Driver

2.1

2.9

3.6

mA

Supply Bias Current ―Note 1

-

4.5

-

mA

VCC Rising Threshold for POR

3.55

3.80

3.98

V

VCC Falling Threshold for POR

3.20

3.50

3.80

V

Vdrive Rising Threshold for POR

3.55

3.80

3.98

V

Vdrive Falling Threshold for POR

2.50

2.75

3.00

V

PWM Input IR ATL Mode

PWM Input Pull-Up Voltage

VPWM_pull up

PWM Input Floating

-

4.0

-

V

PWM Input High Threshold

0.9

1.15

1.3

V

PWM Input Low Threshold

0.7

0.95

1.1

V

PWM Tri-level High Threshold

2.4

2.65

2.9

V

PWM Tri-level Low Threshold

2.2

2.5

2.7

V

PWM Input Current Low

0.7

1.0

1.4

mA

PWM Input Current High

0.7

1.0

1.4

mA

PWM Input Current Tri-state

60

125

190

uA

PWM Input Tri-State Mode (+3.3V or +5V signal level)

PWM Input Rising Threshold, Note 1

-

1.65

-

V

PWM Input Falling Threshold, Note 1

-

1.3

-

V

Tri-State LO_GATE Threshold

0.7

0.95

1.1

V

Tri-State LO_GATE Hysteresis

100

200

300

mV

Tri-State HI_GATE Threshold

2.4

2.65

2.9

V

Tri-State HI_GATE Hysteresis

100

200

300

mV