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LMV225SD Datasheet(PDF) 28 Page - Texas Instruments |
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LMV225SD Datasheet(HTML) 28 Page - Texas Instruments |
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28 / 30 page ![]() EK A 2 · EK A 1 = EK A A LMV225, LMV226, LMV228 SNWS013L – AUGUST 2003 – REVISED MARCH 2013 www.ti.com The maximum error for this approximation occurs at the geometric mean of a gain section, which is e.g. for the third segment: (10) The size of the error increases with distance between the thresholds. LAYOUT CONSIDERATIONS For a proper functioning part a good board layout is necessary. Special care should be taken for the series resistance R1 (Figure 66) that determines the attenuation. For high resistor values the parasitic capacitance of the resistor may significantly impact the realized attenuation. The effective attenuation will be lower than intended. To reduce the parasitic capacitance across resistor R1, this resistor can be composed of several components in series instead of using a single component. 28 Submit Documentation Feedback Copyright © 2003–2013, Texas Instruments Incorporated Product Folder Links: LMV225 LMV226 LMV228 |
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