28F008C3 datasheet(32/59 Pages) INTEL

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PRODUCT PREVIEW

4.6

AC Characteristics—Write Operations(1)—Extended Temperature

Product

-90

-110

3.0 V – 3.6 V

100

2.7 V – 3.6 V

110

Symbol

Parameter

Note

Min

Unit

tPHWL /

tPHEL

RP# High Recovery to WE#

(CE#) Going Low

150

tELWL /

tWLEL

CE# (WE#) Setup to WE#

(CE#) Going Low

0000

tELEH /

tWLWH

WE# (CE#) Pulse Width

tDVWH /

tDVEH

Data Setup to WE# (CE#)

Going High

50506060

tAVWH /

tAVEH

Address Setup to WE# (CE#)

Going High

50607070

tWHEH /

tEHWH

CE# (WE#) Hold Time from

WE# (CE#) High

0000

tWHDX /

tEHDX

Data Hold Time from WE#

(CE#) High

20000

tWHAX /

tEHAX

Address Hold Time from WE#

(CE#) High

20000

tWHWL /

tEHEL

WE# (CE#) Pulse Width High

W10

tVPWH /

tVPEH

VPP Setup to WE# (CE#) Going

High

200

W11

tQVVL

VPP Hold from Valid SRD

30000

NOTES:

Write timing characteristics during erase suspend are the same as during write-only operations.

Refer to Table 5 for valid A

IN or DIN.

Sampled, but not 100% tested.

Write pulse width (tWP) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going high

(whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH. Similarly, Write pulse width high (tWPH) is defined

from CE# or WE# going high (whichever goes high first) to CE# or WE# going low (whichever goes low first). Hence,

tWPH = tWHWL = tEHEL = tWHEL = tEHWL.

See Test Configuration (Figure 8).

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