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AN3432 Datasheet(PDF) 11 Page - STMicroelectronics

Part # AN3432
Description  How to choose a bypass diode for a silicon panel junction box
PDF  24 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN3432 Datasheet(HTML) 11 Page - STMicroelectronics

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AN3432
Application constraints
Doc ID 019041 Rev 1
11/24
3
Application constraints
3.1
Constraints linked with the junction box characteristics
The forward voltage induces conduction losses (Pcond) and leakage current induces reverse
losses (Prev). The best trade off needs to take into account:
●
Solar panel efficiency impact
●
Thermal runaway risk (directly linked with power losses)
●
Compatibility with flash test
●
Thermal test (linked with forward voltage)
●
Thermal cycling test
3.1.1
Power losses
Diode conduction losses
When the diode is conducting in DC mode, its forward voltage causes power losses called
Pcond. These losses represent the most part of the total power losses and decrease when
the junction temperature increases. The application note AN604 describes the way to
calculate them:
Equation 10
Considering a solar panel built with 48 cells in series, divided in two sets of 24 cells
protected by one bypass diode each. If one cell of the first set is shadowed while the other
47 cells are fully illuminated, the bypass diode of the shadowed set is conducting, and the
bypass diode of the second set is in reverse bias. The second set generates a current Ipm
while the first set sinks the reverse current Is of the shaded cell. Then the conduction losses
are:
Equation 11
The maximum loss calculations are made with the current through the bypass diode equal
to the maximum photocurrent ISC.
Equation 12
Figure 8 shows the maximum conduction losses for two different types of diodes:
●
STPS20L45 (low forward voltage)
●
STPS2045 (lower leakage current and higher forward voltage than STPS2045)
−
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