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AN3432 Datasheet(PDF) 12 Page - STMicroelectronics

Part # AN3432
Description  How to choose a bypass diode for a silicon panel junction box
PDF  24 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN3432 Datasheet(HTML) 12 Page - STMicroelectronics

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Application constraints
AN3432
12/24
Doc ID 019041 Rev 1
Figure 8.
STPS20L45C and STPS2045C conduction losses versus junction
temperature
For a first consideration the lower is the forward voltage the higher is the efficiency. However,
for a Schottky diode, a lower forward voltage causes a higher leakage current. This is its
main technological trade off.
Diode reverse losses
When the diode is reversed bias, all the cells bridged by the diode generate photocurrent.
Most of the time, in bypass application, the leakage current induces reverse losses. They
increase with the junction temperature and can be calculated using Equation 13.
Equation 13
0
1
2
3
4
5
6
7
8
9
10
-40
-20
0
20
40
60
80
100
120
140
160
180
200
Pcond (W)
STPS2045C
STPS20L45C
I sc = 8 A
Tj (°C)
)
C
125
Tj
(
c
R
R
R
j
rev
e
)·
C
125
,
V
(
I·
V
)
T
(
P
°
−
°
=



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