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AN3432 Datasheet(PDF) 12 Page - STMicroelectronics |
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AN3432 Datasheet(HTML) 12 Page - STMicroelectronics |
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12 / 24 page ![]() Application constraints AN3432 12/24 Doc ID 019041 Rev 1 Figure 8. STPS20L45C and STPS2045C conduction losses versus junction temperature For a first consideration the lower is the forward voltage the higher is the efficiency. However, for a Schottky diode, a lower forward voltage causes a higher leakage current. This is its main technological trade off. Diode reverse losses When the diode is reversed bias, all the cells bridged by the diode generate photocurrent. Most of the time, in bypass application, the leakage current induces reverse losses. They increase with the junction temperature and can be calculated using Equation 13. Equation 13 0 1 2 3 4 5 6 7 8 9 10 -40 -20 0 20 40 60 80 100 120 140 160 180 200 Pcond (W) STPS2045C STPS20L45C I sc = 8 A Tj (°C) ) C 125 Tj ( c R R R j rev e )· C 125 , V ( I· V ) T ( P ° − ° = |
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