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AN3432 Datasheet(PDF) 16 Page - STMicroelectronics

Part # AN3432
Description  How to choose a bypass diode for a silicon panel junction box
PDF  24 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN3432 Datasheet(HTML) 16 Page - STMicroelectronics

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AN3432
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Doc ID 019041 Rev 1
Figure 12.
Thermal runaway risk for STPS20L45C (Tamb = 85 °C, Rth(j-a) = 31.3 °C/W)
As shown on Figure 12, the junction temperature is 152°C in conduction. At turn-off this
temperature would generate initial losses of 9.5 W making the equilibrium point impossible
since both temperature and leakage will increase in a thermal runaway manner due to the
poor cooling.
To solve this problem, there are two options:
Reduce the thermal resistance Rth(c-a) of the junction box (modify geometry, change
compound…)
Select a diode with much less leakage current as STPS2045C, as shown in Figure 13, even
if the junction temperature at turn off is higher than STPS20L45 due to its higher forward
voltage drop and power losses. Therefore, there is no thermal runaway risk anymore.
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P(W)
Pthermal(Tj )
Tj@t 0 =152 °C
Prev(Tj )
Pcond(Tj )
Thermal runaway
Prev(Tj@t0)>Pcond(Tj@t0)
Tj (°C)



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