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AN3432 Datasheet(PDF) 13 Page - STMicroelectronics |
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AN3432 Datasheet(HTML) 13 Page - STMicroelectronics |
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13 / 24 page ![]() AN3432 Application constraints Doc ID 019041 Rev 1 13/24 Figure 9. STPS20L45C and STPS2045C reverse losses versus junction temperature The reverse losses curves, shown in Figure 9, are calculated in the following application conditions: Ppanel = 400 W at Tamb = 85 °C, 3 bypass diodes, VOC(STC) = 85 V To calculate the maximum reverse voltage VRRM, use the method described in Section 2.3.2. VR = 25 V, Tj = Tamb Prev_2045(85 °C) = 0.014 W Prev_20L45(85 °C) = 0.13 W In application conditions, the solar module efficiency lost due to bypass diodes is around 0.05% for STPS20L45 and 0.004% for STPS2045. The diode with the lower forward voltage (STPS20L45C) has the drawback of a higher leakage current. The consequence is not visible on power module efficiency due to the low level contribution of the bypass diode reverse losses. However, it impacts the diode choice since the leakage current is directly linked with thermal runaway risk. To avoid this phenomenon the choice of a diode with higher forward voltage is mandatory as described in Section 3.1.2. 0 1 2 3 4 5 6 7 8 9 10 -40 -20 0 20 40 60 80 100 120 140 160 180 200 Prev (W) STPS2045C STPS20L45C VR = 25 V Tj (°C) |
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