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MAX1809EEE Datasheet(PDF) 2 Page - Maxim Integrated Products

Part # MAX1809EEE
Description  3A, 1MHz, DDR Memory Termination Supply
PDF  17 Pages
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Manufacturer  MAXIM [Maxim Integrated Products]
Direct Link  https://www.maximintegrated.com/en.html
Logo MAXIM - Maxim Integrated Products

MAX1809EEE Datasheet(HTML) 2 Page - Maxim Integrated Products

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3A, 1MHz, DDR Memory Termination Supply
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VIN = VCC = 3.3V, VEXTREF = 1.1V, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: LX has clamp diodes to PGND and IN. If continuous current is applied through these diodes, thermal limits must be
observed.
VCC, IN to GND ........................................................-0.3V to +6V
IN to VCC.............................................................................±0.3V
GND to PGND.....................................................................±0.3V
SHDN, SS, FB, TOFF, RREF,
EXTREF to GND.......................................-0.3V to (VCC + 0.3V)
LX Current (Note 1).............................................................±4.7A
REF Short Circuit to GND Duration ............................Continuous
Continuous Power Dissipation (TA = +70°C)
28-Pin QFN (derate 20mW/°C above +70°C;
part mounted on 1in2 of 1oz copper) ..............................1.6W
16-Pin QSOP (derate 12.5mW/°C above +70°C;
part mounted on 1in2 of 1oz copper) .................................1W
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Input Voltage
VIN,VCC
3.0
5.5
V
Feedback Voltage Accuracy
(VFB - VEXTREF)
VIN = VCC = 3V to 5.5V, ILOAD = 0,
VEXTREF = 1.25V (Note 2)
-12
+12
mV
Feedback Load Regulation Error
∆VFB
ILOAD = -3A to +3A, VEXTREF = 1.25V
20
mV
External Reference Voltage
Range
VEXTREF
VIN = VCC = 3V to 5.5V
VREF -
0.01
VIN -
1.7
V
Reference Voltage
VREF
1.078
1.100
1.122
V
Reference Load Regulation
IREF = -1µA to +10µA
0.5
2.0
mV
VIN = 4.5V
90
200
PMOS Switch
On-Resistance
RPMOS
ILX = 0.5A
VIN = 3V
110
250
m
Ω
VIN = 4.5V
70
150
NMOS Switch
On-Resistance
RNMOS
ILX = 0.5A
VIN = 3V
80
200
m
Ω
Current-Limit Threshold
ILIMIT
VIN > VLX
3.5
4.1
4.7
A
Switching Frequency
fSW
(Note 3)
1
MHz
ICC
fSW = 500kHz
1
No Load Supply Current
IIN
fSW = 500kHz
16
mA
Shutdown Supply Current
ISHDN
SHDN = GND, ICC + IIN
<1
15
µA
Thermal-Shutdown Threshold
Hysteresis = 15
°C
160
°C
Undervoltage Lockout Threshold
VCC falling, hysteresis = 90mV
2.5
2.6
2.7
V
FB Input Bias Current
IFB
VFB = VEXTREF + 0.1V
0
60
250
nA
RTOFF = 30.1k
Ω
0.24
0.30
0.37
RTOFF = 110k
Ω
0.9
1.0
1.1
Off-Time
tOFF
RTOFF = 499k
Ω
3.8
4.5
5.2
µs
Startup Off-Time
4 x tOFF
µs
On-Time
tON
(Note 3)
0.35
µs



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