MAX1809EEE datasheet(3/17 Pages) MAXIM

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3A, 1MHz, DDR Memory Termination Supply

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ELECTRICAL CHARACTERISTICS

(VIN = VCC = 3.3V, VEXTREF = 1.1V, TA = -40°C to +85°C, unless otherwise noted.) (Note 4)

Note 2: The output voltage will have a DC-regulation level lower than the feedback error comparator threshold by 50% of the ripple.

Note 3: Recommended operating frequency, not production tested.

Note 4: Specifications from 0°C to -40°C are guaranteed by design, not production tested.

ELECTRICAL CHARACTERISTICS (continued)

(VIN = VCC = 3.3V, VEXTREF = 1.1V, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

SS Source Current

ISS

µA

SS Sink Current

ISS

VSS = 1V

SHDN Input Current

VSHDN = 0, VCC

-1

µA

VIL

0.8

SHDN Logic Levels

VIH

Maximum Output RMS Current

IOUT(RMS)

3.1

ARMS

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Input Voltage

VIN, VCC

3.0

5.5

Feedback Voltage Accuracy

(VFB - VEXTREF)

VIN = VCC = 3V to 5.5V, ILOAD = 0,

VEXTREF = 1.25V

-24

+24

External Reference Voltage

Range

VEXTREF

VIN = VCC = 3 V to 5.5V

VREF -

0.01V

VIN -

1.9V

Reference Voltage

VREF

1.067

1.133

VIN = 4.5V

200

PMOS Switch

On-Resistance

RPMOS

ILX = 0.5A

VIN = 3V

250

Ω

VIN = 4.5V

150

NMOS Switch

On-Resistance

RNMOS

ILX = 0.5A

VIN = 3V

200

Ω

Current-Limit Threshold

ILIMIT

VIN > VLX

3.3

4.9

FB Input Bias Current

IFB

VFB = VEXTREF + 0.1V

300

Off-Time

tOFF

RTOFF = 110k

Ω

0.85

1.15

µs

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