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S1011 Datasheet(PDF) 9 Page - Seiko Instruments Inc |
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S1011 Datasheet(HTML) 9 Page - Seiko Instruments Inc |
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9 / 43 page ![]() HIGH-WITHSTAND VOLTAGE BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR Rev.1.2_00 S-1011 Series Seiko Instruments Inc. 9 Electrical Characteristics 1. VDD detection product 1. 1 S-1011 Series J / L type Table 15 (Ta = +25°C unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Detection voltage *1 −VDET 3.6 V ≤ −VDET(S) ≤ 4.15 V −VDET(S) × 0.970 −VDET(S) −VDET(S) × 1.030 V 1 4.2 V ≤ −VDET(S) ≤ 4.95 V −VDET(S) × 0.975 −VDET(S) −VDET(S) × 1.025 V 1 Hysteresis width VHYS J type 3.6 V ≤ −VDET(S) ≤ 4.15 V −VDET × 0.010 −VDET × 0.050 −VDET × 0.100 V 1 4.2 V ≤ −VDET(S) ≤ 4.95 V −VDET × 0.020 −VDET × 0.050 −VDET × 0.090 V 1 L type *2 3.6 V ≤ −VDET(S) ≤ 4.95 V − 0 − V 1 Current consumption ISS VDD = −VDET − 0.1 V, 3.6 V ≤ −VDET ≤ 4.95 V − 0.60 1.60 μA2 Operation voltage VDD − 1.8 − 36.0 V 1 Output current IOUT Output transistor Nch VDS *3 = 0.05 V VDD = 2.9 V 0.33 − − mA 3 Leakage current ILEAK Output transistor Nch VDD = 30.0 V, VOUT = 30.0 V − − 2.0 μA3 Detection delay time *4 tRESET CN = 3.3 nF 8.0 10.0 12.0 ms 4 Release delay time *5 tDELAY CP = 3.3 nF 8.0 10.0 12.0 ms 4 CP pin discharge ON resistance RCP VDD = 6.9 V, VCP = 0.5 V 0.52 − 2.2 k Ω − CN pin discharge ON resistance RCN VDD = 2.9 V, VCN = 0.5 V 1.0 − 5.0 k Ω − *1. −VDET: Actual detection voltage value, −VDET(S): Set detection voltage value *2. Hysteresis width is "unavailable", so release voltage = detection voltage. *3. VDS: Drain-to-source voltage of the output transistor *4. The time period from when the pulse voltage of −VDET(S) + 0.5 V → −VDET(S) − 0.5 V is applied to the VDD pin to when VOUT reaches VDD / 2, after the power supply voltage (VDD) reaches the release voltage once. *5. The time period from when the pulse voltage of −VDET(S) − 0.5 V → −VDET(S) + 0.5 V is applied to the VDD pin to when VOUT reaches VDD / 2. |
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