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S1011 Datasheet(PDF) 9 Page - Seiko Instruments Inc

Part # S1011
Description  BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR
PDF  43 Pages
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Manufacturer  SII [Seiko Instruments Inc]
Direct Link  http://www.sii.co.jp
Logo SII - Seiko Instruments Inc

S1011 Datasheet(HTML) 9 Page - Seiko Instruments Inc

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HIGH-WITHSTAND VOLTAGE BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR
Rev.1.2_00
S-1011 Series
Seiko Instruments Inc.
9
Electrical Characteristics
1. VDD detection product
1. 1 S-1011 Series J / L type
Table 15
(Ta =
+25°C unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Circuit
Detection voltage
*1
−VDET
3.6 V
≤ −VDET(S) ≤ 4.15 V
−VDET(S)
× 0.970
−VDET(S)
−VDET(S)
× 1.030
V
1
4.2 V
≤ −VDET(S) ≤ 4.95 V
−VDET(S)
× 0.975
−VDET(S)
−VDET(S)
× 1.025
V
1
Hysteresis width
VHYS
J type
3.6 V
≤ −VDET(S) ≤ 4.15 V
−VDET
× 0.010
−VDET
× 0.050
−VDET
× 0.100
V
1
4.2 V
≤ −VDET(S) ≤ 4.95 V
−VDET
× 0.020
−VDET
× 0.050
−VDET
× 0.090
V
1
L type
*2
3.6 V
≤ −VDET(S) ≤ 4.95 V
−
0
−
V
1
Current consumption
ISS
VDD =
−VDET − 0.1 V, 3.6 V ≤ −VDET ≤ 4.95 V
−
0.60
1.60
μA2
Operation voltage
VDD
−
1.8
−
36.0
V
1
Output current
IOUT
Output transistor
Nch
VDS
*3 = 0.05 V
VDD = 2.9 V
0.33
−
−
mA
3
Leakage current
ILEAK
Output transistor
Nch
VDD = 30.0 V, VOUT = 30.0 V
−
−
2.0
μA3
Detection delay time
*4
tRESET
CN = 3.3 nF
8.0
10.0
12.0
ms
4
Release delay time
*5
tDELAY
CP = 3.3 nF
8.0
10.0
12.0
ms
4
CP pin discharge
ON resistance
RCP
VDD = 6.9 V, VCP = 0.5 V
0.52
−
2.2
k
Ω
−
CN pin discharge
ON resistance
RCN
VDD = 2.9 V, VCN = 0.5 V
1.0
−
5.0
k
Ω
−
*1.
−VDET: Actual detection voltage value, −VDET(S): Set detection voltage value
*2. Hysteresis width is "unavailable", so release voltage = detection voltage.
*3. VDS: Drain-to-source voltage of the output transistor
*4. The time period from when the pulse voltage of
−VDET(S) + 0.5 V → −VDET(S) − 0.5 V is applied to the VDD pin to when
VOUT reaches VDD / 2, after the power supply voltage (VDD) reaches the release voltage once.
*5. The time period from when the pulse voltage of
−VDET(S) − 0.5 V → −VDET(S) + 0.5 V is applied to the VDD pin to when
VOUT reaches VDD / 2.



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