ISO7342

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2

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5

6

7

8

16

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9

INA

INB

INC

OUTD

OUTA

OUTB

OUTC

IND

GND2

0.1 µF

2 mm max

EN2

GND2

EN1

GND1

2 mm max

GND1

0.1 µF

ISO7340C, ISO7340FC, ISO7341C, ISO7341FC, ISO7342C, ISO7342FC

SLLSEI6E – SEPTEMBER 2014 – REVISED APRIL 2015

www.ti.com

Typical Application (continued)

Figure 23. Typical ISO7342 Circuit Hook-up

9.2.1.2.1

Electromagnetic Compatibility (EMC) Considerations

Many applications in harsh industrial environment are sensitive to disturbances such as electrostatic discharge

(ESD), electrical fast transient (EFT), surge and electromagnetic emissions. These electromagnetic disturbances

are regulated by international standards such as IEC 61000-4-x and CISPR 22. Although system-level

performance and reliability depends, to a large extent, on the application board design and layout, the ISO734x

incorporate many chip-level design improvements for overall system robustness. Some of these improvements

include:

•

Robust ESD protection cells for input and output signal pins and inter-chip bond pads.

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Low-resistance connectivity of ESD cells to supply and ground pins.

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Enhanced performance of high voltage isolation capacitor for better tolerance of ESD, EFT and surge events.

•

Bigger on-chip decoupling capacitors to bypass undesirable high energy signals through a low impedance

path.

•

PMOS and NMOS devices isolated from each other by using guard rings to avoid triggering of parasitic

SCRs.

•

Reduced common mode currents across the isolation barrier by ensuring purely differential internal operation.

9.2.1.3 Application Performance Curves

Typical eye diagrams of ISO734x indicate low jitter and wide open eye at the maximum data rate of 25 Mbps.

Figure 24. Eye Diagram at 25 Mbps, 5 V and 25°C

Figure 25. Eye Diagram at 25 Mbps, 3.3 V and 25°C

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Product Folder Links: ISO7340C ISO7340FC ISO7341C ISO7341FC ISO7342C ISO7342FC