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AM4376 Datasheet(PDF) 180 Page - Texas Instruments

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Part # AM4376
Description  AM437x Sitara??Processors
PDF  261 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

AM4376 Datasheet(HTML) 180 Page - Texas Instruments

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DDR3 Keepout Region
Encompasses Entire DDR3 Routing Area
DDR3 Controller
AM4376, AM4377, AM4378, AM4379
SPRS851B – JUNE 2014 – REVISED APRIL 2015
www.ti.com
5.12.8.2.1.3.5 DDR3 Keepout Region
The region of the PCB used for DDR3 circuitry must be isolated from other signals. The DDR3 keepout region is
defined for this purpose and is shown in Figure 5-55. This region should encompass all DDR3 circuitry and the
region size varies with component placement and DDR3 routing. Additional clearances required for the keepout
region are shown in Table 5-54. Non-DDR3 signals should not be routed on the same signal layer as DDR3
signals within the DDR3 keepout region. Non-DDR3 signals may be routed in the region provided they are routed
on layers separated from DDR3 signal layers by a ground layer. No breaks should be allowed in the reference
ground or VDDS_DDR power plane in this region. In addition, the VDDS_DDR power plane should cover the
entire keepout region.
Figure 5-55. DDR3 Keepout Region
5.12.8.2.1.3.6 DDR3 Bulk Bypass Capacitors
Bulk bypass capacitors are required for moderate speed bypassing of the DDR3 and other circuitry. Table 5-55
contains the minimum numbers and capacitance required for the bulk bypass capacitors. Note that this table only
covers the bypass needs of the DDR3 interface and DDR3 devices. Additional bulk bypass capacitance may be
needed for other circuitry.
Table 5-55. Bulk Bypass Capacitors(1)
NO.
PARAMETER
MIN
MAX
UNIT
1
VDDS_DDR bulk bypass capacitor count
2
Devices
2
VDDS_DDR bulk bypass total capacitance
20
μF
3
DDR3#1 bulk bypass capacitor count
2
Devices
4
DDR3#1 bulk bypass total capacitance
20
μF
5
DDR3#2 bulk bypass capacitor count(2)
2
Devices
6
DDR3#2 bulk bypass total capacitance(2)
20
μF
7
DDR3#3 bulk bypass capacitor count(3)
2
Devices
8
DDR3#3 bulk bypass total capacitance(3)
20
μF
9
DDR3#4bulk bypass capacitor count(3)
2
Devices
10
DDR3#4 bulk bypass total capacitance(3)
20
μF
(1) These devices should be placed near the devices they are bypassing, but preference should be given to the placement of the high-
speed (HS) bypass capacitors and DDR3 signal routing.
(2) Only used when two DDR3 devices are used.
(3) Only used when four DDR3 devices are used.
180
Specifications
Copyright © 2014–2015, Texas Instruments Incorporated
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Product Folder Links: AM4376 AM4377 AM4378 AM4379



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