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AM4376 Datasheet(PDF) 180 Page - Texas Instruments |
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AM4376 Datasheet(HTML) 180 Page - Texas Instruments |
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180 / 261 page ![]() DDR3 Keepout Region Encompasses Entire DDR3 Routing Area DDR3 Controller AM4376, AM4377, AM4378, AM4379 SPRS851B – JUNE 2014 – REVISED APRIL 2015 www.ti.com 5.12.8.2.1.3.5 DDR3 Keepout Region The region of the PCB used for DDR3 circuitry must be isolated from other signals. The DDR3 keepout region is defined for this purpose and is shown in Figure 5-55. This region should encompass all DDR3 circuitry and the region size varies with component placement and DDR3 routing. Additional clearances required for the keepout region are shown in Table 5-54. Non-DDR3 signals should not be routed on the same signal layer as DDR3 signals within the DDR3 keepout region. Non-DDR3 signals may be routed in the region provided they are routed on layers separated from DDR3 signal layers by a ground layer. No breaks should be allowed in the reference ground or VDDS_DDR power plane in this region. In addition, the VDDS_DDR power plane should cover the entire keepout region. Figure 5-55. DDR3 Keepout Region 5.12.8.2.1.3.6 DDR3 Bulk Bypass Capacitors Bulk bypass capacitors are required for moderate speed bypassing of the DDR3 and other circuitry. Table 5-55 contains the minimum numbers and capacitance required for the bulk bypass capacitors. Note that this table only covers the bypass needs of the DDR3 interface and DDR3 devices. Additional bulk bypass capacitance may be needed for other circuitry. Table 5-55. Bulk Bypass Capacitors(1) NO. PARAMETER MIN MAX UNIT 1 VDDS_DDR bulk bypass capacitor count 2 Devices 2 VDDS_DDR bulk bypass total capacitance 20 μF 3 DDR3#1 bulk bypass capacitor count 2 Devices 4 DDR3#1 bulk bypass total capacitance 20 μF 5 DDR3#2 bulk bypass capacitor count(2) 2 Devices 6 DDR3#2 bulk bypass total capacitance(2) 20 μF 7 DDR3#3 bulk bypass capacitor count(3) 2 Devices 8 DDR3#3 bulk bypass total capacitance(3) 20 μF 9 DDR3#4bulk bypass capacitor count(3) 2 Devices 10 DDR3#4 bulk bypass total capacitance(3) 20 μF (1) These devices should be placed near the devices they are bypassing, but preference should be given to the placement of the high- speed (HS) bypass capacitors and DDR3 signal routing. (2) Only used when two DDR3 devices are used. (3) Only used when four DDR3 devices are used. 180 Specifications Copyright © 2014–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: AM4376 AM4377 AM4378 AM4379 |
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