AM4376 datasheet(181/261 Pages) TI

181 / 261 page

AM4376, AM4377, AM4378, AM4379

www.ti.com

SPRS851B – JUNE 2014 – REVISED APRIL 2015

5.12.8.2.1.3.7 DDR3 High-Speed Bypass Capacitors

High-speed (HS) bypass capacitors are critical for proper DDR3 interface operation. It is particularly important to

minimize the parasitic series inductance of the HS bypass capacitors, device DDR3 power, and device DDR3

ground connections. Table 5-56 contains the specification for the HS bypass capacitors as well as for the power

connections on the PCB. Generally speaking, it is good to:

1. Fit as many HS bypass capacitors as possible.

2. Minimize the distance from the bypass cap to the power terminals being bypassed.

3. Use the smallest physical sized capacitors possible with the highest capacitance readily available.

4. Connect the bypass capacitor pads to their vias using the widest traces possible and using the largest hole

size via possible.

5. Minimize via sharing. Note the limites on via sharing shown in Table 5-56.

Table 5-56. High-Speed Bypass Capacitors

NO.

PARAMETER

MIN

TYP

MAX

UNIT

HS bypass capacitor package size(1)

0201

0402

10 mils

Distance, HS bypass capacitor to VDDS_DDR and VSS terminal being

400

mils

bypassed(2)(3)(4)

VDDS_DDR HS bypass capacitor count

Devices

VDDS_DDR HS bypass capacitor total capacitance

μF

Trace length from VDDS_DDR and VSS terminal to connection via(2)

mils

Distance, HS bypass capacitor to DDR3 device being bypassed(5)

150

mils

DDR3 device HS bypass capacitor count(6)

Devices

DDR3 device HS bypass capacitor total capacitance(6)

0.85

μF

Number of connection vias for each HS bypass capacitor(7)(8)

Vias

Trace length from bypass capacitor connect to connection via(2)(8)

100

mils

Number of connection vias for each DDR3 device power and ground

Vias

terminal(9)

Trace length from DDR3 device power and ground terminal to connection

mils

via(2)(7)

(1) LxW, 10-mil units; for example, a 0402 is a 40x20-mil surface-mount capacitor.

(2) Closer and shorter is better.

(3) Measured from the nearest VDDS_DDR and ground terminal to the center of the capacitor package.

(4) Three of these capacitors should be located underneath the device, between the cluster of VDDS_DDR and ground terminals, between

the DDR3 interfaces on the package.

(5) Measured from the DDR3 device power and ground terminal to the center of the capacitor package.

(6) Per DDR3 device.

(7) An additional HS bypass capacitor can share the connection vias only if it is mounted on the opposite side of the board. No sharing of

vias is permitted on the same side of the board.

(8) An HS bypass capacitor may share a via with a DDR3 device mounted on the same side of the PCB. A wide trace should be used for

the connection and the length from the capacitor pad to the DDR3 device pad should be less than 150 mils.

(9) Up to a total of two pairs of DDR3 power and ground terminals may share a via.

5.12.8.2.1.3.8 Return Current Bypass Capacitors

Use additional bypass capacitors if the return current reference plane changes due to DDR3 signals hopping

from one signal layer to another. The bypass capacitor here provides a path for the return current to hop planes

along with the signal. As many of these return current bypass capacitors should be used as possible. Because

these are returns for signal current, the signal via size may be used for these capacitors.

Specifications

181

Submit Documentation Feedback

Product Folder Links: AM4376 AM4377 AM4378 AM4379

AM4376 Datasheet(PDF) 181 Page - Texas Instruments

AM4376 Datasheet(HTML) 181 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL