2x

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3

ELECTRICAL CHARACTERISTICS (continued)

°C, unless otherwise noted.)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Oscillator Frequency Set

Accuracy

Measured at +25

°C

±10

%

Oscillator Temperature Coefficient

-150

ppm/

°C

Output Off-Current

RWB = low (Note 5)

0.1

OUTPUT AND GENERAL SPECIFICATIONS

Maximum Output Set Current

200

mA

Minimum Output Set Current

15

mA

Output Off-Current

EN = Low

1

mA

Write Rise-Time

Measured from 10% to 90% (Notes 5, 7)

0.85

0.9

ns

Write Fall-Time

Measured from 10% to 90% (Notes 5, 7)

0.95

1.0

ns

Output Overshoot

δ

(Notes 7, 8)

8

%

(Notes 5, 9, condition i.)

1.0

2.0

Output-Current Noise

(Notes 5, 9, condition ii.)

1.5

3.0

nA/

√Hz

Input Propagation Delay

At

D2, D3, D4, D5. (Notes 5, 10)

2.0

4.0

ns

Enable Propagation Delay

At EN, RWB (Notes 5, 7, 9, 10)

150

ns

Disable Propagation Delay

At EN, RWB (Notes 5, 7, 9, 10)

150

ns

MONITOR DIODE INPUT AND SAMPLE-AND-HOLD SPECIFICATIONS

MDIN Current Range

10

600

µA

MDIN Voltage

1.6

2.0

V

MDIN Capacitance

0.5

pF

Equivalent MDIN Bandwidth

(Note 11)

250

500

kHz

SEL = low

1.667

Equivalent Transimpedance

SEL = high

10.0

k

Ω

Acquisition Rate

SCLK

Triggered on rising edge

1

MHz

MDOUT Stability

5

%

MDOUT Droop Rate

Discrete time sample and hold

0

V/s

MDOUT DC Offset

Zero level

0.26

0.30

0.34

V

MDOUT Voltage

1.3

1.5

V

MDOUT Voltage Resolution

±3.9

mVpk

MDOUT Resistance

3k

Ω

±5

%

SCLK to MDOUT Delay

(Note 5)

100

ns

CONTROL SIGNAL (EN, RWB, SEL, SCLK)

TTL Input High Voltage

Applies to SEL and SCLK

+2.0

V

TTL Input Low Voltage

Applies to SEL and SCLK

+0.8

V

CMOS Input High Voltage

Applies to EN and RWB

x 0.8

V