LM82

SNIS113D – JANUARY 2000 – REVISED MARCH 2013

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Application Hints

The LM82 can be applied easily in the same way as other integrated-circuit temperature sensors and its remote

diode sensing capability allows it to be used in new ways as well. It can be soldered to a printed circuit board,

and because the path of best thermal conductivity is between the die and the pins, its temperature will effectively

be that of the printed circuit board lands and traces soldered to the LM82's pins. This presumes that the ambient

air temperature is almost the same as the surface temperature of the printed circuit board; if the air temperature

is much higher or lower than the surface temperature, the actual temperature of the of the LM82 die will be at an

intermediate temperature between the surface and air temperatures. Again, the primary thermal conduction path

is through the leads, so the circuit board temperature will contribute to the die temperature much more strongly

than will the air temperature.

To measure temperature external to the LM82's die, use a remote diode. This diode can be located on the die of

a target IC, allowing measurement of the IC's temperature, independent of the LM82's temperature. The LM82

has been optimized to measure the remote diode of a Pentium II processor as shown in Figure 14. A discrete

diode can also be used to sense the temperature of external objects or ambient air. Remember that a discrete

diode's temperature will be affected, and often dominated, by the temperature of its leads.

Figure 14. Pentium or 3904 Temperature vs LM82 Temperature Reading

Most silicon diodes do not lend themselves well to this application. It is recommended that a 2N3904 transistor

base emitter junction be used with the collector tied to the base.

A diode connected 2N3904 approximates the junction available on a Pentium microprocessor for temperature

measurement. Therefore, the LM82 can sense the temperature of this diode effectively.

ACCURACY EFFECTS OF DIODE NON-IDEALITY FACTOR

operating points of a diode. For a bias current ratio of N:1, this difference is given as:

where

•

η is the non-ideality factor of the process the diode is manufactured on,

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