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ISO5452 Datasheet(PDF) 28 Page - Texas Instruments |
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ISO5452 Datasheet(HTML) 28 Page - Texas Instruments |
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28 / 37 page ![]() ( ) OL-WC 4 2.5 P = 0.5 20 kHz 650 nC 15 V ( 8 V) + = 72.61 mW 4 + 10 2.5 + 10 æ ö ´ ´ ´ - - ´ ç ÷ è ø VCC2 15V VEE2 8V RG OUTH/L ISO5452 ron-max roff-max QG ( ) on-max off-max OL-WC INP G CC2 EE2 on-max G off-max G r r P = 0.5 f Q V V + r + R r + R æ ö ´ ´ ´ - ´ ç ÷ è ø ISO5452 SLLSEQ4A – AUGUST 2015 – REVISED SEPTEMBER 2015 www.ti.com In comparison to POL, the actual dynamic output power under worst case condition, POL-WC, depends on a variety of parameters: where • fINP = signal frequency at the control input IN+ • QG = power device gate charge • VCC2 = positive output supply with respect to GND2 • VEE2 = negative output supply with respect to GND2 • ron-max = worst case output resistance in the on-state: 4Ω • roff-max = worst case output resistance in the off-state: 2.5Ω • RG = gate resistor (5) Once RG is determined, Equation 5 is to be used to verify whether POL-WC < POL. Figure 55 shows a simplified output stage model for calculating POL-WC. Figure 55. Simplified Output Model for Calculating POL-WC 10.2.2.10 Example This examples considers an IGBT drive with the following parameters: ION-PK = 2 A, QG = 650 nC, fINP = 20 kHz, VCC2 = 15V, VEE2 = –8 V (6) Apply the value of the gate resistor RG = 10 Ω. Then, calculating the worst-case output power consumption as a function of RG, using Equation 5 ron-max = worst case output resistance in the on-state: 4 Ω, roff-max = worst case output resistance in the off-state: 2.5 Ω, RG = gate resistor yields (7) Because POL-WC = 72.61 mW is below the calculated maximum of POL = 88.25 mW, the resistor value of RG = 10 Ω is suitable for this application. 28 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: ISO5452 |
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