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ISO5452 Datasheet(PDF) 28 Page - Texas Instruments

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Part # ISO5452
Description  High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safety Features
PDF  37 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

ISO5452 Datasheet(HTML) 28 Page - Texas Instruments

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(
)
OL-WC
4
2.5
P
= 0.5 20 kHz 650 nC
15 V ( 8 V)
+
= 72.61 mW
4
+ 10
2.5
+ 10
æ
ö
´
´
´
- -
´ ç
÷
è
ø
VCC2
15V
VEE2
8V
RG
OUTH/L
ISO5452
ron-max
roff-max
QG
(
)
on-max
off-max
OL-WC
INP
G
CC2
EE2
on-max
G
off-max
G
r
r
P
= 0.5
f
Q
V
V
+
r
+ R
r
+ R
æ
ö
´
´
´
-
´ ç
÷
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ISO5452
SLLSEQ4A – AUGUST 2015 – REVISED SEPTEMBER 2015
www.ti.com
In comparison to POL, the actual dynamic output power under worst case condition, POL-WC, depends on a variety
of parameters:
where
•
fINP = signal frequency at the control input IN+
•
QG = power device gate charge
•
VCC2 = positive output supply with respect to GND2
•
VEE2 = negative output supply with respect to GND2
•
ron-max = worst case output resistance in the on-state: 4Ω
•
roff-max = worst case output resistance in the off-state: 2.5Ω
•
RG = gate resistor
(5)
Once RG is determined, Equation 5 is to be used to verify whether POL-WC < POL. Figure 55 shows a simplified
output stage model for calculating POL-WC.
Figure 55. Simplified Output Model for Calculating POL-WC
10.2.2.10 Example
This examples considers an IGBT drive with the following parameters:
ION-PK = 2 A, QG = 650 nC, fINP = 20 kHz, VCC2 = 15V, VEE2 = –8 V
(6)
Apply the value of the gate resistor RG = 10 Ω.
Then, calculating the worst-case output power consumption as a function of RG, using Equation 5 ron-max = worst
case output resistance in the on-state: 4
Ω, roff-max = worst case output resistance in the off-state: 2.5 Ω, RG =
gate resistor yields
(7)
Because POL-WC = 72.61 mW is below the calculated maximum of POL = 88.25 mW, the resistor value of RG = 10
Ω is suitable for this application.
28
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