0.1 µF

Shutdown

Control

Supply

Voltage

Load

Supply

-

+

IN-

IN+

GND

REF

VS

OUT

1,000

R +

S

1,000

12,500

(11

R ) +

·

S

12,500

20,000

(17

R ) + 20,000

·

S

50,000

(41

R ) + 50,000

·

S

INA250A1, INA250A2, INA250A3, INA250A4

www.ti.com

SBOS511B – APRIL 2015 – REVISED DECEMBER 2015

Device Functional Modes (continued)

Table 1. Input Resistance

DEVICE

GAIN

INA250A1

200 mV/A

50 k

Ω

INA250A2

500 mV/A

20 k

Ω

INA250A3

800 mV/A

12.5 k

Ω

INA250A4

2 V/A

5 k

Ω

Table 2. Device Gain Error Factor

DEVICE

SIMPLIFIED GAIN ERROR FACTOR

INA250A1

INA250A2

INA250A3

INA250A4

For example, using an INA250A2 and the corresponding gain error equation from Table 2, a series resistance of

10

Ω results in a gain error factor of 0.991. The corresponding gain error is then calculated using Equation 3,

resulting in a gain error of approximately 0.84% because of the external 10-

Ω series resistors.

7.4.3 Shutting Down the Device

Although the device does not have a shutdown pin, the low power consumption allows for the device to be

powered from the output of a logic gate or transistor switch that can turn on and turn off the voltage connected to

the device power-supply pin. However, in current-shunt monitoring applications, there is also a concern for how

much current is drained from the shunt circuit in shutdown conditions. Evaluating this current drain involves

considering the device simplified schematic in shutdown mode, as shown in Figure 35.

Figure 35. Shutting Down the Device

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