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CGS410 Datasheet(PDF) 16 Page - National Semiconductor (TI) |
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CGS410 Datasheet(HTML) 16 Page - National Semiconductor (TI) |
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16 / 18 page ![]() 40 Device Specifications (Continued) 43 DC ELECTRICAL CHARACTERISTICS VCC e 5V g5% unless otherwise specified (Continued) Symbol Parameter Pin Name Conditions Min Typ Max Units ISINK Charge Pump Sink Current FILTER CPO SEL e 0(4) 15 25 35 m A CPO SEL e 1(4) 50 75 120 m A IDD Maximum Supply Current DVDD BVDD XVDD and VDD e 525V(5) 45 mA AVDD Note 1 50 Load to BVDD b 2V Note 2 50 Load to BVDD b 3V Note 3 BVDD e 50V Note 4 AVDD e 50V Note 5 PCLK and PCLKB terminated with 50 to BVDD b 2V DIFF VOH and DIFF VOL terminated with 500 to BVDD b 2V DIFF Level (Bit 0) e 0 44 AC ELECTRICAL CHARACTERISTICS Symbol Parameter Conditions Min Typ Max Units t1 R WB Setup to CSB Falling Edge 0 ns t2 R WB Hold from CSB Falling Edge 10 ns t3 CSB low time (while writing data) TBD 10 ns t4 CSB high time (while writing data) TBD 10 ns t5 CSB asserted to Read Data Bus Driven (Note 1) 8 ns t6 CSB Asserted to Valid Read Data (Note 1) 40 ns t7 CSB Negated to Read Data TRI-STATE 15 ns t8 Write Data Setup to CSB Rising Edge 15 ns t9 Write Data hold from CSB rising edge 0 ns t10 EN Setup to CSB Falling Edge 0 ns t11 EN Hold from CSB Falling Edge 10 ns t12 LCLK EN Setup to LCLK Rising Edge 6 ns t13 LCLK EN Hold from LCLK Rising Edge b 4ns t14 Skew from CMOS PLCK Rising Edge to LCLK Rising Edge 4 ns t15 Skew from CMOS PLCK Rising Edge to LCLK Falling Edge 5 ns t16 Skew from DIFF PCLK Rising Edge to LCLK Rising Edge 3 ns t17 Skew from DIFF PCLK rising edge to LCLK falling edge 4 ns Note 1 CL e 50 pF on DATA pin 45 TIMING ISSUES TLF11919 – 29 Note In the system read cycle EN R WB and CSB are measured at 13V threshold voltage DATA is a CMOS compatible output FIGURE 4-1 System Read Timing Specification 16 |
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