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FX021 Datasheet(PDF) 2 Page - Texas Instruments

Part # FX021
Description  Synchronous Buck NexFET Power Stage
PDF  20 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

FX021 Datasheet(HTML) 2 Page - Texas Instruments

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CSD97374Q4M
SLPS382C – JANUARY 2013 – REVISED JULY 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
(1)
TA = 25°C (unless otherwise noted)
VALUE
UNIT
MIN
MAX
VIN to PGND
-0.3
30
V
VSW to PGND , VIN to VSW
-0.3
30
V
VSW to PGND, VIN to VSW (<10ns)
-7
33
V
VDD to PGND
–0.3
6
V
PWM, SKIP# to PGND
–0.3
6
V
BOOT to PGND
–0.3
35
V
BOOT to PGND (<10ns)
-2
38
V
BOOT to BOOT_R
–0.3
6
V
Human Body Model (HBM)
2000
V
ESD Rating
Charged Device Model (CDM)
500
V
Power Dissipation, PD
8
W
Operating Temperature Range, TJ
-40
150
°C
Storage Temperature Range, TSTG
–55
150
°C
(1)
Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating
Conditions" is not implied. Exposure to Absolute Maximum rated conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
TA = 25° (unless otherwise noted)
Parameter
Conditions
MIN
MAX
UNIT
Gate Drive Voltage, VDD
4.5
5.5
V
Input Supply Voltage, VIN
24
V
Continuous Output Current, IOUT
VIN = 12V, VDD = 5V, VOUT = 1.8V,
25
A
fSW = 500kHz, LOUT = 0.29µH
(1)
Peak Output Current, IOUT-PK
(2)
60
A
Switching Frequency, fSW
CBST = 0.1µF (min)
2000
kHz
On Time Duty Cycle
85
%
Minimum PWM On Time
40
ns
Operating Temperature
–40
125
°C
(1)
Measurement made with six 10-µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins.
(2)
System conditions as defined in Note 1. Peak Output Current is applied for tp = 10ms, duty cycle ≤ 1%
THERMAL INFORMATION
TA = 25°C (unless otherwise noted)
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Thermal Resistance, Junction-to-Case (Top of package)(1)
22.8
°C/W
RθJB
Thermal Resistance, Junction-to-Board(2)
2.5
°C/W
(1)
RθJC is determined with the device mounted on a 1-inch² (6.45 -cm²), 2-oz (.071-mm thick) Cu pad on a 1.5-inch x 1.5-inch, 0.06-inch
(1.52-mm) thick FR4 board.
(2)
RθJB value based on hottest board temperature within 1mm of the package.
2
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Copyright © 2013, Texas Instruments Incorporated
Not Recommended For New Designs



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