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TMS28F210 Datasheet(PDF) 8 Page - Texas Instruments

Part # TMS28F210
Description  65536 BY 16-BIT FLASH MEMORY
PDF  25 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS28F210 Datasheet(HTML) 8 Page - Texas Instruments

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TMS28F210
65536 BY 16-BIT
FLASH MEMORY
SMJS210D – DECEMBER 1992 – REVISED AUGUST 1997
8
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
programming and erasure
In the erased state, all bits are at a logic 1. Before erasing the device, all memory bits must be programmed to
a logic 0. Afterwards, the entire chip is erased. At this point, the bits, now logic 1s, can be programmed
accordingly. Refer to the Fastwrite and Fasterase algorithms for further detail.
command register
The command register controls the program and erase functions of the TMS28F210. The algorithm-selection
mode can be activated using the command register in addition to the above method. When VPP is high, the
contents of the command register and the function being performed can be changed. The command register
is written to when E is low and W is pulsed low. The address is latched on the leading edge of the pulse, while
the data is latched on the trailing edge. Accidental programming or erasure is minimized because two
commands must be executed to invoke either operation. The command register is inhibited when VCC is below
the erase / write lockout voltage, VLKO.
power supply considerations
Each device should have a 0.1-
µF ceramic capacitor connected between VCC and VSS to suppress circuit noise.
Changes in current drain on VPP requires it to have a bypass capacitor as well. Printed circuit traces for both
power supplies should be appropriate to handle the current demand.
command definitions
See Table 3 for command definitions.
Table 3. Command Definitions
COMMAND
REQUIRED
BUS
FIRST BUS CYCLE
SECOND BUS CYCLE
COMMAND
BUS
CYCLES
OPERATION†
ADDRESS
DATA
OPERATION†
ADDRESS
DATA
Read
1
Write
X
0000h
Read
RA
RD
Algorithm-Selection Mode
3
Write
X
0090h
Read
0000
0001
0097h
00E5h
Set-Up-Erase/Erase
2
Write
X
0020h
Write
X
20h
Erase Verify
2
Write
EA
00A0h
Read
X
EVD
Set-Up-Program/Program
2
Write
X
0040h
Write
PA
PD
Program Verify
2
Write
X
00C0h
Read
X
PVD
Reset
2
Write
X
00FFh
Write
X
00FFh
† Modes of operation are defined in Table 1.
Legend:
EA
Address of memory location to be read during erase verify
RA
Address of memory location to be read
PA
Address of memory location to be programmed. Address is latched on the falling edge of W.
RD
Data read from location RA during the read operation
EVD
Data read from location EA during erase verify
PD
Data to be programmed at location PA. Data is latched on the rising edge of W.
PVD
Data read from location PA during program verify
X
Don’t care.
read command
Memory contents can be accessed while VPP is high or low. When VPP is high, writing 0000h into the command
register invokes the read operation. When the device is powered up, the default contents of the command
register are 0000h and the read operation is enabled. The read operation remains enabled until a different valid
command is written to the command register.



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