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TMS28F210 Datasheet(PDF) 8 Page - Texas Instruments |
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TMS28F210 Datasheet(HTML) 8 Page - Texas Instruments |
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8 / 25 page ![]() TMS28F210 65536 BY 16-BIT FLASH MEMORY SMJS210D – DECEMBER 1992 – REVISED AUGUST 1997 8 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 programming and erasure In the erased state, all bits are at a logic 1. Before erasing the device, all memory bits must be programmed to a logic 0. Afterwards, the entire chip is erased. At this point, the bits, now logic 1s, can be programmed accordingly. Refer to the Fastwrite and Fasterase algorithms for further detail. command register The command register controls the program and erase functions of the TMS28F210. The algorithm-selection mode can be activated using the command register in addition to the above method. When VPP is high, the contents of the command register and the function being performed can be changed. The command register is written to when E is low and W is pulsed low. The address is latched on the leading edge of the pulse, while the data is latched on the trailing edge. Accidental programming or erasure is minimized because two commands must be executed to invoke either operation. The command register is inhibited when VCC is below the erase / write lockout voltage, VLKO. power supply considerations Each device should have a 0.1- µF ceramic capacitor connected between VCC and VSS to suppress circuit noise. Changes in current drain on VPP requires it to have a bypass capacitor as well. Printed circuit traces for both power supplies should be appropriate to handle the current demand. command definitions See Table 3 for command definitions. Table 3. Command Definitions COMMAND REQUIRED BUS FIRST BUS CYCLE SECOND BUS CYCLE COMMAND BUS CYCLES OPERATION† ADDRESS DATA OPERATION† ADDRESS DATA Read 1 Write X 0000h Read RA RD Algorithm-Selection Mode 3 Write X 0090h Read 0000 0001 0097h 00E5h Set-Up-Erase/Erase 2 Write X 0020h Write X 20h Erase Verify 2 Write EA 00A0h Read X EVD Set-Up-Program/Program 2 Write X 0040h Write PA PD Program Verify 2 Write X 00C0h Read X PVD Reset 2 Write X 00FFh Write X 00FFh † Modes of operation are defined in Table 1. Legend: EA Address of memory location to be read during erase verify RA Address of memory location to be read PA Address of memory location to be programmed. Address is latched on the falling edge of W. RD Data read from location RA during the read operation EVD Data read from location EA during erase verify PD Data to be programmed at location PA. Data is latched on the rising edge of W. PVD Data read from location PA during program verify X Don’t care. read command Memory contents can be accessed while VPP is high or low. When VPP is high, writing 0000h into the command register invokes the read operation. When the device is powered up, the default contents of the command register are 0000h and the read operation is enabled. The read operation remains enabled until a different valid command is written to the command register. |
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