TMS28F210

65536 BY 16-BIT

FLASH MEMORY

SMJS210D – DECEMBER 1992 – REVISED AUGUST 1997

16

POST OFFICE BOX 1443

switching characteristics over recommended ranges of supply voltage and operating free-air

temperature

PARAMETERS

TEST

ALTERNATE

’28F210-10

’28F210-12

’28F210-15

’28F210-17

UNIT

PARAMETERS

CONDITIONS

SYMBOL

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

UNIT

ta(A)

Access time

from address

tAVQV

100

120

150

170

ns

ta(E)

Access time

from E

tELQV

100

120

150

170

ns

ten(G)

Access time

from G

tGLQV

45

50

55

60

ns

tc(R)

Cycle time,

read

tAVAV

100

120

150

170

ns

td(E)

Delay time, chip

enable low to

low-Z output

CL = 100 pF,

tELQX

0

0

0

0

ns

td(G)

Delay time, G

low to low-Z

output

L

1 Series 74

TTL load,

Input tr ≤ 20 ns,

Input tf ≤ 20 ns

tGLQX

0

0

0

0

ns

tdis(E)

Chip disable to

hi-Z output

Input tf ≤ 20 ns

tEHQZ

0

55

0

55

0

55

0

55

ns

tdis(G)

Disable time,

output enable to

hi-Z output

tGHQZ

0

30

0

30

0

35

0

35

ns

th(D)

Hold time, data

valid from

address, E, or

G†

tAXQX

0

0

0

0

ns

trec(W)

Write recovery

time before

read

tWHGL

6

6

6

6

µs

† Whichever occurs first