TMS28F210

65536 BY 16-BIT

FLASH MEMORY

SMJS210D – DECEMBER 1992 – REVISED AUGUST 1997

1

POST OFFICE BOX 1443

EPROMs

’28F210-10 100 ns

’28F210-12 120 ns

’28F210-15 150 ns

’28F210-17 170 ns

Burn-In and Choice of Operating

Temperature Ranges

and Output Lines

– Active Write . . . 55 mW

– Active Read... 165 mW

– Electrical Erase... 82.5 mW

– Standby... 0.55 mW

(CMOS-Input Levels)

– 40

°C to 125°C

description

The TMS28F210 is a 65 536 by 16-bit (1048 576-bit), programmable read-only memory that can be electrically

bulk-erased and reprogrammed. It is available in 10 000- and 1 000-program/erase-endurance-cycle versions.

The TMS28F210 flash memory is offered in a 44-lead plastic leaded chip carrier package using 1,25 mm

(50-mil) lead spacing (FN suffix), and a 40-lead thin small-outline package (DBW suffix).

The TMS28F210 is characterized for operation in temperature ranges of 0

°C to 70°C, –40°C to 85°C, and

–40

°C to 125°C.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Copyright

© 1997, Texas Instruments Incorporated

39

38

37

36

35

34

33

32

31

30

29

1

A13

A12

A11

A10

A9

VSS

NC

A8

A7

A6

A5

18 19

7

8

9

10

11

12

13

14

15

16

17

DQ12

DQ11

DQ10

DQ9

DQ8

VSS

NC

DQ7

DQ6

DQ5

DQ4

20 21 22 23

5

43

2

6

42 41 40

24 25 26 27 28

FN PACKAGE

( TOP VIEW )

44 43

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.