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TMS28F210 Datasheet(PDF) 9 Page - Texas Instruments |
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TMS28F210 Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 25 page ![]() TMS28F210 65536 BY 16-BIT FLASH MEMORY SMJS210D – DECEMBER 1992 – REVISED AUGUST 1997 9 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 algorithm-selection-mode command The algorithm-selection mode is activated by writing 0090h into the command register. The manufacturer equivalent code (0097h) is identified by the value read from address location 0000h, and the device equivalent code (00E5h) is identified by the value read from address location 0001h. set-up-program/program commands The programming algorithm initiates with E = VIL, W = VIL, G = VIH, VPP = VPPH, and VCC = 5 V. To enter the programming mode, write the set-up-program command, 0040h, into the command register. The programming operation is invoked by the next write-enable pulse. Addresses are latched internally on the falling edge of W, and data is latched internally on the rising edge of W. The programming operation begins on the rising edge of W and ends on the rising edge of the next W pulse. The program operation requires 10 µs for completion before the program-verify command, 00C0h, can be loaded. Maximum program timing is controlled by the internal stop timer. When the stop timer terminates the program operation, the device enters an inactive state and remains inactive until a command is received. program-verify command The TMS28F210 can be programmed sequentially or randomly because it is programmed one word at a time. Each word must be verified after it is programmed. The program-verify operation prepares the device to verify the most recently programmed word. To invoke the program-verify operation, 00C0h must be written into the command register. The program-verify operation ends on the rising edge of W. While verifying a word, the TMS28F210 applies an internal margin voltage to the designated word. If the true data and programmed data match, programming continues to the next designated word location; otherwise, the word must be reprogrammed. Figure 1 shows how commands and bus operations are combined for word programming. set-up-erase/erase commands The erase algorithm initiates with E = VIL, W = VIL, G = VIH, VPP = VPPH, and VCC = 5 V. To enter the erase mode, write the set-up-erase command, 0020h, into the command register. After the TMS28F210 is in the erase mode, writing a second erase command, 0020h, into the command register invokes the erase operation. The erase operation begins on the rising edge of W and ends on the rising edge of the next W. The erase operation requires 10 ms to complete before the erase-verify command, 00A0h, can be loaded. Maximum erase timing is controlled by the internal stop timer. When the stop timer terminates the erase operation, the device enters an inactive state and remains inactive until a command is received. erase-verify command All words must be verified following an erase operation. After the erase operation is complete, an erased word can be verified by writing the erase-verify command, 00A0h, into the command register. This command causes the device to exit the erase mode on the rising edge of W. The address of the word to be verified is latched on the falling edge of W. The erase-verify operation remains enabled until a command is written to the command register. |
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