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TMS28F210 Datasheet(PDF) 11 Page - Texas Instruments

Part # TMS28F210
Description  65536 BY 16-BIT FLASH MEMORY
PDF  25 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS28F210 Datasheet(HTML) 11 Page - Texas Instruments

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TMS28F210
65536 BY 16-BIT
FLASH MEMORY
SMJS210D – DECEMBER 1992 – REVISED AUGUST 1997
11
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
erase-verify command (continued)
To determine whether or not all the words have been erased, the TMS28F210 applies a margin voltage to each
word. If FFFFh is read from the word, all bits in the designated word have been erased. The erase-verify
operation continues until all of the words have been verified. If FFFFh is not read from a word, an additional erase
operation needs to be executed. Figure 2 shows the combination of commands and bus operations for
electrically erasing the TMS28F210.
reset command
To reset the TMS28F210 after a set-up-erase operation or a set-up-program operation without changing the
contents in memory, write 00FFh into the command register two consecutive times. After executing the reset
command, the device defaults to the read mode.
Fastwrite algorithm
The TMS28F210 is programmed using the Texas Instruments fastwrite algorithm previously shown in Figure
1. This algorithm programs in a nominal time of two seconds.
Fasterase algorithm
The TMS28F210 is erased using the Texas Instruments fasterase algorithm shown in Figure 2. The memory
array needs to be programmed completely (using the fastwrite algorithm) before erasure begins. Erasure
typically occurs in one second.
parallel erasure
To reduce total erase time, several devices can be erased in parallel. Since each flash memory can erase at
a different rate, every device must be verified separately after each erase pulse. After a given device has been
erased successfully, the erase command should not be issued to this device again. All devices that complete
erasure should be masked until the parallel erasure process is finished shown in Figure 3.
Examples of how to mask a device during parallel erase include driving the E pin high, writing the read command
(0000h) to the device when the others receive a set-up-erase or erase command, or disconnecting it from all
electrical signals with relays or other types of switches.



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