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ZSPM4521 Datasheet(PDF) 6 Page - Integrated Device Technology

Part # ZSPM4521
Description  High-Efficiency Charger for Li-Ion Batteries
PDF  30 Pages
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

ZSPM4521 Datasheet(HTML) 6 Page - Integrated Device Technology

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ZSPM4521 Datasheet
© 2016 Integrated Device Technology, Inc.
6
January 27, 2016
1.3.
Recommended Operating Conditions
Table 1.3
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Photovoltaic Input Operating Voltage at VIN Pin
VIN
4.0
5.3
7.2
V
Sense Resistor
RSENSE
50
m
Ω
Output Filter Inductor Typical Value
1)
LOUT
4.7
µH
Output Filter Capacitor Typical Value
2)
COUT
4.7
µF
Output Filter Capacitor ESR
COUT-ESR
100
m
Ω
Input Supply Bypass Capacitor Value
3)
CIN
3.3
10
µF
VDD Supply Bypass Capacitor Value
2)
CVDD
70
100
130
nF
Operating Free Air Temperature
TA
-40
85
°C
Operating Junction Temperature
TJ
-40
125
°C
1)
For best performance, use an inductor with a saturation current rating higher than the maximum VBAT load requirement plus the
inductor current ripple.
2)
For best performance, use a low ESR ceramic capacitor.
3)
For best performance, use a low ESR ceramic capacitor. If CIN is not a low ESR ceramic capacitor, add a 0.1µF ceramic capacitor in
parallel to CIN.
1.4.
Electrical Characteristics
Electrical characteristics TJ = -40°C to 125°C, VIN = 5.3V, (unless otherwise noted)
Table 1.4
Electrical Characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
VIN Supply Voltage
Photovoltaic Voltage Input
VIN
4
5.3
7.2
V
Quiescent Current
Normal Mode
ICC-NORM
ILOAD = 0A, no switching
EN
≥ 2.2V (HIGH)
3
mA
Quiescent Current
Disabled Mode
ICC-DISABLE
EN = 0V
10
50
µA
VBAT Leakage
Leakage Current From
Battery
IBAT-LEAK
EN = 0V, VVBAT = 4.1V
10
µA
Reverse Current
IBAT-BACK
VVBAT> VIN, VVBAT = 4.1V,
Tj < 85°C
10
µA



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