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NSC800 Datasheet(PDF) 72 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # NSC800
Description  NSC800TM High-Performance Low-Power CMOS Microprocessor
PDF  76 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

NSC800 Datasheet(HTML) 72 Page - National Semiconductor (TI)

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140 NSC800M883B MIL-STD-833
Class C Screening
National Semiconductor offers the NSC800D and NSC800E
with full class B screening per MIL-STD-883 for Military
Aerospace programs requiring high reliability In addition
this screening is available for all of the key NSC800 periph-
eral devices
Electrical
testing
is
performed
in
accordance
with
RESTS800X which tests or guarantees all of the electrical
performance characteristics of the NSC800 data sheet A
copy of the current revision of RETS800X is available upon
request
100% Screening Flow
Test
MIL-STD-883 MethodCondition
Requirement
Internal Visual
2010B
100%
Stabilization Bake
1008 C 24 Hrs
a
150 C
100%
Temperature Cycling
1010 C 10 Cycles b65 C a150 C
100%
Constant Acceleration
2001 E 30000 G’s Y1 Axis
100%
Fine Leak
1014 A or B
100%
Gross Leak
1014C
100%
Burn-In
1015 160 Hrs
a
125 C (using
100%
burn-in circuits shown below)
Final Electrical
a
25 C DC per RETS800X
100%
PDA
10% Max
a
125 C AC and DC per RETS800X
100%
b
55 C AC and DC per RETS800X
100%
a
25 C AC per RETS800X
100%
QA Acceptance
5005
Sample Per
Quality Conformance
Method 5005
External Visual
2009
100%
150 Burn-In Circuits
5240HR
NSC800D883B (Dual-In-Line)
TLC5171 – 32
Top View
5241HR
NSC800E883B (Leadless Chip Carrier)
TLC5171 – 33
All resistors 27 kX unless marked otherwise
Note 1
All resistors are
W g 5% unless otherwise specified
Note 2
All clocks 0V to 3V 50% duty cycle in phase with k 1 ms rise and fall time
Note 3
Device to be cooled down under power after burn-in
72



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