ST7LITEUS5 datasheet(104/136 Pages) STMICROELECTRONICS

104 / 136 page

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Electrical characteristics

ST7LITEUS2, ST7LITEUS5

104/136

12.6

Memory characteristics

TA = -40 to 125 °C, unless otherwise specified;

Table 57.

RAM and Hardware registers

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode 1)

Halt mode (or Reset)

1.6

Table 58.

Flash Program memory

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Operating voltage for Flash

write/erase

2.4(1)

Minimum VDD supply voltage without losing data stored in RAM (in Halt mode or under reset) or in

hardware registers (only in Halt mode). Guaranteed by construction, not tested in production.

5.5

tprog

Programming time for 1~32

bytes(2)

Up to 32 bytes can be programmed at a time.

TA=−40 to +125°C

Programming time for 1 kByte

TA=+25°C

0.16

0.32

tRET

Data retention(3)

Data based on reliability test results and monitored in production.

TA=+55°C

(4)

The data retention time increases when the TA decreases.

years

NRW

Write erase cycles

TA=+25°C

10k(5)

Design target value pending full product characterization.

cycles

IDD

Supply current(6)

Guaranteed by Design. Not tested in production.

Read / Write / Erase

modes, fCPU = 8 MHz,

VDD = 5.5 V

2.6

No Read/No Write

Mode

100

μA

Power down mode /

Halt

00.1

μA

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